| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2015: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Outline of Final Research Achievements |
Low threshold current green-to-yellow BeZnCdSe single quantum-well (SQW) laser diodes (LDs) have been developed. The waveguide was formed of a ridge structure with etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, and then covered with a thick SiO2 layer and planarized with chemical-mechanical polishing and reactive ion etching process. A 535-nm green laser with 7-nm-thick SQW showed a threshold current and voltage of 7.07 mA and 7.89 V for a cavity width of 4 μm and length of 300 μm. A 563-nm yellow LD with 4-nm-thick SQW was also developed with 7.4-mA and 8.48-V threshold current and voltage for a 3-μm-wide, 300-μm-long cavity. The threshold current in these devices was decreased to 1/10 to 1/5, compared with our previous devices. Thus the device performance can be significantly improved with much lower power consumption.
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