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Research on high-precision charge transfer using dopant atoms in silicon

Research Project

Project/Area Number 25289098
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionUniversity of Toyama

Principal Investigator

Ono Yukinori  富山大学, 大学院理工学研究部(工学), 教授 (80374073)

Co-Investigator(Kenkyū-buntansha) HORI Masahiro  静岡大学, 電子工学研究所, 講師 (50643269)
Tsuchiya Toshiaki  島根大学, 総合理工学研究科, 教授 (20304248)
Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2013: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
Keywordsチャージポンピング / ドナー / 単一電子転送 / 電子正孔再結合 / 電子スピン共鳴 / 単一電子 / 不純物原子
Outline of Final Research Achievements

In order to realize high-precision charge transfer, we have performed three basic experiments, and obtained the following results. First, we have developed the method that enables us to monitor the electron-hole recombination process in time domain. Using the method, cross-sections for electron and hole captures were successfully obtained. Next, we investigated the electron-hole recombination via single interface defects, and found that the single defects could convey two electrons for one cycle of the charge pumping procedure. This strongly suggests that the existing Shockley Read Hall (SRH) theory for the recombination does not hold true. In addition, we have investigated, using electron spin resonance, the spin states of shallow donors, phosphorus, arsenic, and antimony, and found that only arsenic exhibited imperfect formation of the paramagnetic state.

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Annual Research Report
  • 2013 Annual Research Report
  • Research Products

    (24 results)

All 2015 2014 2013 2012 Other

All Journal Article (8 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 8 results,  Acknowledgement Compliant: 6 results) Presentation (14 results) (of which Int'l Joint Research: 6 results,  Invited: 3 results) Remarks (2 results)

  • [Journal Article] Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
    • Journal Title

      J. Appl. Phys.

      Volume: 118 Issue: 21

    • DOI

      10.1063/1.4936790

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Electrical activation and electron spin resonance measurements of arsenic implanted in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 14

    • DOI

      10.1063/1.4917295

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Evaluation of Accuracy of Charge Pumping Current in Time Domain2015

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E98.C Issue: 5 Pages: 390-394

    • DOI

      10.1587/transele.E98.C.390

    • NAID

      130005067742

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method2015

    • Author(s)
      T. Tsuchiya, Y. Ono
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DC01-04DC01

    • DOI

      10.7567/jjap.54.04dc01

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current2015

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 4

    • DOI

      10.1063/1.4906997

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Analysis of electron capture process in charge pumping sequence using time domain measurements2014

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 26

    • DOI

      10.1063/1.4905032

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting2013

    • Author(s)
      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama
    • Journal Title

      Appllied Physics Letters

      Volume: 102 Issue: 19

    • DOI

      10.1063/1.4803014

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] X-ray and photoluminescence properties of Sm3+ doped barium sulfide2012

    • Author(s)
      Maeda, K., Kawaida, N.,Tsudome, R., Sakai, K., Ikari, T..
    • Journal Title

      Physica Status Solidi (C)

      Volume: 9(12) Issue: 12 Pages: 93-96

    • DOI

      10.1002/pssc.201200321

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] Fabrication of triple-dot single-electron transistor and its turnstile operation2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi
    • Organizer
      28th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Cryogenic Charge Pumping using Silicon on Insulators2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      8th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Electrically detected magnetic resonance study on silicon PN junction2015

    • Author(s)
      Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
    • Organizer
      Electrically detected magnetic resonance study on silicon PN junction
    • Place of Presentation
      Jeju Island, Korea
    • Year and Date
      2015-07-01
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Charge pumping by point defects - Towards ultimate control of recombination in silicon2015

    • Author(s)
      Y. Ono M. Hori
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Campus Plaza Kyoto, Kyoto
    • Year and Date
      2015-06-16
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ESR measurements of As donor electrons in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      TOKI MESSE Niigata Convention Center Niigata, Japan
    • Year and Date
      2015-06-16
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low Temperature Charge Pumping in SOI Gated PIN Diode2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      2015 Silicon Nanoelectronics Workshop(SNW-2015)
    • Place of Presentation
      Rega Royal Hotel Kyoto, Japan
    • Year and Date
      2015-06-14
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method2014

    • Author(s)
      T. Tsuchiya, Y. Ono
    • Organizer
      2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba Japan
    • Year and Date
      2014-09-09 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Evaluation of accuracy of time-domain charge pumping2014

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa, Japan
    • Year and Date
      2014-07-01 – 2014-07-03
    • Related Report
      2014 Annual Research Report
  • [Presentation] Time-domain measurements of charge pimping current2014

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2014-06-08 – 2014-06-09
    • Related Report
      2014 Annual Research Report
  • [Presentation] Electron pump by a single atom -Towards ultimate control of electronic charges-

    • Author(s)
      Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
    • Organizer
      2014 International Workshop on Advanced Nanovision Science
    • Place of Presentation
      Hamamatsu Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] ESR study on pure single crystalline sapphire

    • Author(s)
      M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
    • Organizer
      Asia-Pacific Conference on Green Technology with Silicides and Related Materials
    • Place of Presentation
      Tsukuba Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] ESR study of arsenic in silicon in low ion-implantation-dose regime

    • Author(s)
      M. Hori, H. Tanaka, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      Kanazawa Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Electron spin resonance measurement of sapphire for KAGRA mirrors

    • Author(s)
      N. Fukumoto, Y. Ono, M. Hori, R. Chikaoka, Y. Hayakawa, S. Moriwaki, and N. Mio
    • Organizer
      12th Asia Pacific Physics Conference
    • Place of Presentation
      Chiba, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Single dopant physics and electronics

    • Author(s)
      Y. Ono
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Verona, Italy
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Remarks] 小野、堀研究室ホームページ

    • URL

      http://www3.u-toyama.ac.jp/yukiono/achievement/int.html

    • Related Report
      2014 Annual Research Report
  • [Remarks] 研究室ホームページ

    • URL

      http://www3.u-toyama.ac.jp/yukiono/index.html

    • Related Report
      2013 Annual Research Report

URL: 

Published: 2013-05-21   Modified: 2019-07-29  

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