Research on high-precision charge transfer using dopant atoms in silicon

• Project/Area Number: 25289098
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: University of Toyama
• Principal Investigator: Ono Yukinori 富山大学, 大学院理工学研究部(工学), 教授 (80374073)
• Co-Investigator(Kenkyū-buntansha): HORI Masahiro 静岡大学, 電子工学研究所, 講師 (50643269) ; Tsuchiya Toshiaki 島根大学, 総合理工学研究科, 教授 (20304248)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000); Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2013: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
• Keywords: チャージポンピング / ドナー / 単一電子転送 / 電子正孔再結合 / 電子スピン共鳴 / 単一電子 / 不純物原子

Outline of Final Research Achievements

In order to realize high-precision charge transfer, we have performed three basic experiments, and obtained the following results. First, we have developed the method that enables us to monitor the electron-hole recombination process in time domain. Using the method, cross-sections for electron and hole captures were successfully obtained. Next, we investigated the electron-hole recombination via single interface defects, and found that the single defects could convey two electrons for one cycle of the charge pumping procedure. This strongly suggests that the existing Shockley Read Hall (SRH) theory for the recombination does not hold true. In addition, we have investigated, using electron spin resonance, the spin states of shallow donors, phosphorus, arsenic, and antimony, and found that only arsenic exhibited imperfect formation of the paramagnetic state.

Research Products

• [Journal Article] Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor (2015)
  • Author(s): M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
  • Journal Title: J. Appl. Phys. Volume: 118 Issue: 21
  • DOI: 10.1063/1.4936790
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Electrical activation and electron spin resonance measurements of arsenic implanted in silicon (2015)
  • Author(s): M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
  • Journal Title: Applied Physics Letters Volume: 106 Issue: 14
  • DOI: 10.1063/1.4917295
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Evaluation of Accuracy of Charge Pumping Current in Time Domain (2015)
  • Author(s): T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
  • Journal Title: IEICE Transactions on Electronics Volume: E98.C Issue: 5 Pages: 390-394
  • DOI: 10.1587/transele.E98.C.390
  • NAID: 130005067742
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method (2015)
  • Author(s): T. Tsuchiya, Y. Ono
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DC01-04DC01
  • DOI: 10.7567/jjap.54.04dc01
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current (2015)
  • Author(s): M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
  • Journal Title: Applied Physics Letters Volume: 106 Issue: 4
  • DOI: 10.1063/1.4906997
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Analysis of electron capture process in charge pumping sequence using time domain measurements (2014)
  • Author(s): M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
  • Journal Title: Applied Physics Letters Volume: 105 Issue: 26
  • DOI: 10.1063/1.4905032
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting (2013)
  • Author(s): Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama
  • Journal Title: Appllied Physics Letters Volume: 102 Issue: 19
  • DOI: 10.1063/1.4803014
  • Peer Reviewed
• [Journal Article] X-ray and photoluminescence properties of Sm3+ doped barium sulfide (2012)
  • Author(s): Maeda, K., Kawaida, N.,Tsudome, R., Sakai, K., Ikari, T..
  • Journal Title: Physica Status Solidi (C) Volume: 9(12) Issue: 12 Pages: 93-96
  • DOI: 10.1002/pssc.201200321
  • Peer Reviewed
• [Presentation] Fabrication of triple-dot single-electron transistor and its turnstile operation (2015)
  • Author(s): M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi
  • Organizer: 28th International Microprocesses and Nanotechnology Conference(MNC2015)
  • Place of Presentation: Toyama International Conference Center, Toyama
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Cryogenic Charge Pumping using Silicon on Insulators (2015)
  • Author(s): T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
  • Organizer: 8th International Microprocesses and Nanotechnology Conference(MNC2015)
  • Place of Presentation: Toyama International Conference Center, Toyama
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Electrically detected magnetic resonance study on silicon PN junction (2015)
  • Author(s): Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
  • Organizer: Electrically detected magnetic resonance study on silicon PN junction
  • Place of Presentation: Jeju Island, Korea
  • Year and Date: 2015-07-01
  • Int'l Joint Research
• [Presentation] Charge pumping by point defects - Towards ultimate control of recombination in silicon (2015)
  • Author(s): Y. Ono M. Hori
  • Organizer: Silicon nanoelectronics for advanced applications
  • Place of Presentation: Campus Plaza Kyoto, Kyoto
  • Year and Date: 2015-06-16
  • Int'l Joint Research / Invited
• [Presentation] ESR measurements of As donor electrons in silicon (2015)
  • Author(s): M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
  • Organizer: The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
  • Place of Presentation: TOKI MESSE Niigata Convention Center Niigata, Japan
  • Year and Date: 2015-06-16
  • Int'l Joint Research
• [Presentation] Low Temperature Charge Pumping in SOI Gated PIN Diode (2015)
  • Author(s): T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
  • Organizer: 2015 Silicon Nanoelectronics Workshop(SNW-2015)
  • Place of Presentation: Rega Royal Hotel Kyoto, Japan
  • Year and Date: 2015-06-14
  • Int'l Joint Research
• [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method (2014)
  • Author(s): T. Tsuchiya, Y. Ono
  • Organizer: 2014 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba Japan
  • Year and Date: 2014-09-09 – 2014-09-11
• [Presentation] Evaluation of accuracy of time-domain charge pumping (2014)
  • Author(s): T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
  • Organizer: 2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Kanazawa, Japan
  • Year and Date: 2014-07-01 – 2014-07-03
• [Presentation] Time-domain measurements of charge pimping current (2014)
  • Author(s): M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
  • Organizer: 2014 Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2014-06-08 – 2014-06-09
• [Presentation] Electron pump by a single atom -Towards ultimate control of electronic charges-
  • Author(s): Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
  • Organizer: 2014 International Workshop on Advanced Nanovision Science
  • Place of Presentation: Hamamatsu Japan
  • Invited
• [Presentation] ESR study on pure single crystalline sapphire
  • Author(s): M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
  • Organizer: Asia-Pacific Conference on Green Technology with Silicides and Related Materials
  • Place of Presentation: Tsukuba Japan
• [Presentation] ESR study of arsenic in silicon in low ion-implantation-dose regime
  • Author(s): M. Hori, H. Tanaka, A. Fujiwara, Y. Ono
  • Organizer: The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
  • Place of Presentation: Kanazawa Japan
• [Presentation] Electron spin resonance measurement of sapphire for KAGRA mirrors
  • Author(s): N. Fukumoto, Y. Ono, M. Hori, R. Chikaoka, Y. Hayakawa, S. Moriwaki, and N. Mio
  • Organizer: 12th Asia Pacific Physics Conference
  • Place of Presentation: Chiba, Japan
• [Presentation] Single dopant physics and electronics
  • Author(s): Y. Ono
  • Organizer: Silicon nanoelectronics for advanced applications
  • Place of Presentation: Verona, Italy
  • Invited
• [Remarks] 小野、堀研究室ホームページ
  • URL: http://www3.u-toyama.ac.jp/yukiono/achievement/int.html
• [Remarks] 研究室ホームページ
  • URL: http://www3.u-toyama.ac.jp/yukiono/index.html