Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET
| Project/Area Number |
25289100
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka Institute of Technology (2015)
Japan Advanced Institute of Science and Technology |
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Principal Investigator |
Yamada Syoji 大阪工業大学, 教育センター, 教授 (00262593)
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| Co-Investigator(Kenkyū-buntansha) |
Tsuchiya Takuma 北海道大学, 工学(系)研究科(研究院), 准教授 (40262597)
Akabori Masashi 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授 (50345667)
岩瀬 比宇麻 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教 (10709132)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
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| Keywords | スピンバルブ素子 / 強磁性電極 / スピンFET論理回路 / スピンFET / スピン軌道相互作用 / インバータ / 論理回路 / スピンエレクトロニクス / 半導体ヘテロ接合 |
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| Outline of Final Research Achievements |
In this study, based on the results obtained in former spin-valve device (close to spin-FET)measurements (high spin injection efficiency, 11 %, and long spin diffusion length, over 5 maivcro-m), we have studied several problems toward the realization of spin-FET as well as spin-FET based Inverter devices. Most difficult problems are found in the device fabrication process such as making ferromagnetic electrode with reliable magnetic properties on the InGaAs hetero-junction surfaces and top-gates via Al2O3 insulator film. As a result, we have succeeded to make spin valve, spin-FET and prototype spin-Inverter devices.
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Report
(4 results)
Research Products
(21 results)
