| Budget Amount *help |
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2016: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
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| Outline of Final Research Achievements |
Since the miniturization of FETs (field effect transistor) is accelerated year by year, the size of an FET in 2020 will become as small as 11 nm, which is comprised of several thousand of atoms. In such small-scaled transistor, wave nature of electrons plays an important roles, in addition, the characteristics of atoms have to be taken into account in order to design and fabricate these devices.
We have developed a simulator, which can be used on K-computer, where the device physics can be taken into account on the basis of quantum physics as well as first principles calculation.
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