| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
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| Outline of Final Research Achievements |
Low temperature crystallization of semiconductor materials by metal-induced crystallization has been studied. It is found that by depositing Si on a heated substrate covered with Al or codepositing Au and Ge on a heated substrate, crystallization can be achieved at lower temperatures than conventional methods. Moreover, it is found that it is possible to activate dopants during crystallization by adding dopants in metal catalysts.
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