Low temperature crystallization of Si by metal-induced crystallization method
Project/Area Number |
25289231
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Inorganic materials/Physical properties
|
Research Institution | Shibaura Institute of Technology |
Principal Investigator |
Kyuno Kentaro 芝浦工業大学, 工学部, 教授 (40251467)
|
Co-Investigator(Renkei-kenkyūsha) |
KAMIKO Masao 東京大学, 生産技術研究所, 助教 (80334366)
|
Project Period (FY) |
2013-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
|
Keywords | 構造・機能材料 / 表面・界面物性 / 半導体物性 / 結晶成長 / 太陽電池 |
Outline of Final Research Achievements |
Low temperature crystallization of semiconductor materials by metal-induced crystallization has been studied. It is found that by depositing Si on a heated substrate covered with Al or codepositing Au and Ge on a heated substrate, crystallization can be achieved at lower temperatures than conventional methods. Moreover, it is found that it is possible to activate dopants during crystallization by adding dopants in metal catalysts.
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Report
(5 results)
Research Products
(26 results)