| Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
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| Outline of Final Research Achievements |
The SiC power devices provide the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. To assemble these power devices, the high temperature packaging technology such as die attach process is needed. As a die attach material, we focus on nanoporous metals that are fabricated through the dealloying method and propose nanoporous bonding (NPB) without solvent and organic substance. As a results, the joints bonded at 350 ℃ showed a high shear strength of above 20 MPa. The shear strength of the joint after isothermal aging at 250 ℃ for 1000 h was more than 25 MPa. It was found that joining using Au NPB was successfully achieved, and that NPB shows potential as a Pb-free interconnection material for high-temperature electronic applications.
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