| Project/Area Number |
25289245
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
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Principal Investigator |
YIN SHU 東北大学, 多元物質科学研究所, 准教授 (40271994)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Tsugio 東北大学, 多元物質科学研究所, 教授 (90091694)
DONG Qiang 東北大学, 多元物質科学研究所, 助教 (00643230)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2015: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
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| Keywords | レアメタルフリー / 透明導電性 / 薄膜 / 新規機能性 / 溶液プロセス / 透明導電性材料 |
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| Outline of Final Research Achievements |
Until now, ITO or metal thin films are mainly utilized. The ITO consists of rare metal element Indium , so the stable supplement that corresponds to the rapid expansion of the ongoing demand in the future has been worried. Usually, metal thin films show a low transparency. Therefore, the development of an inexpensive conductive thin film material consists of In-free elements, a novel synthesis process to replace the sputtering thin film method is an urgent topic. In the present research, by using a solution process of about 90-200oC, we have successfully synthesized the mixed-valence state tungsten compound, and also successfully precipitated the conductive zinc oxide thin film directly on a glass substrate. By controlling the orientated growth of ZnO along c- axis direction, the great improvement on both transparency and conductivity was successfully realized
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