Deep UV emisson device by integrated pulsed laser deposition method
| Project/Area Number |
25289256
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Material processing/Microstructural control engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
SATO SHUNICHI 東北大学, 多元物質科学研究所, 教授 (30162431)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2014: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2013: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Keywords | パルスレーザー堆積法 / 冷凍ターゲット / ワイドバンドギャップ半導体 / 薄膜 / フェムト用パルスレーザー / 薄膜プロセス / フェムト秒レーザー |
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| Outline of Final Research Achievements |
This study aimed at fabricating a high-quality cubic-type boron nitride (c-BN) thin films for a deep-UV light-emitting diode by integrated pulsed laser deposition method. A diamond-like carbon (DLC) films with high sp3 content and with very flat surface morphology were prepared by PLD using a frozen cyclohesane target. A thin film composed of c-BN and B2O3 was formed by PLD of a frozed borazine target with high intensity laser pulses. B2O3 was formed by laser ablation of a B(OH)3 which was produced by chemical reaction of borazine with water molecules during laser irradiation.
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Report
(5 results)
Research Products
(14 results)
