| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2015: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
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| Outline of Final Research Achievements |
In this study, we fabricated ordered pore arrays and pillar/wire arrays in meso-macro scale with a high-aspect-ratio in GaAs and InP substrates by a combination of sphere photolithography, (metal assisted) chemical etching, anodic etching and anodic oxidation and evaluated their device characteristics. We also investigated the effects of etchant composition on the orientation-dependent surface morphology of GaAs during anisotropic chemical etching using various types of etchants. Obtained results indicated that etching rates for each crystal plane were strongly affected by the type and concentration of oxidants.
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