Novel processing of functional semiconductor surfaces in meso-macro scale by utilizing self-organized structures
| Project/Area Number |
25289263
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Material processing/Microstructural control engineering
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| Research Institution | Kogakuin University |
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Principal Investigator |
Ono Sachiko 工学院大学, 公私立大学の部局等, 研究員 (90052886)
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| Co-Investigator(Kenkyū-buntansha) |
ASOH Hidetaka 工学院大学, 先進工学部, 准教授 (80338277)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2015: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
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| Keywords | 材料加工・処理 / 半導体微細加工 / 薄膜プロセス / ナノ・マイクロ科学 / ナノ材料 / 先端機能デバイス / 半導体超微細化 / 自己規則化 / 国際情報交換 ドイツ |
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| Outline of Final Research Achievements |
In this study, we fabricated ordered pore arrays and pillar/wire arrays in meso-macro scale with a high-aspect-ratio in GaAs and InP substrates by a combination of sphere photolithography, (metal assisted) chemical etching, anodic etching and anodic oxidation and evaluated their device characteristics. We also investigated the effects of etchant composition on the orientation-dependent surface morphology of GaAs during anisotropic chemical etching using various types of etchants. Obtained results indicated that etching rates for each crystal plane were strongly affected by the type and concentration of oxidants.
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Report
(4 results)
Research Products
(203 results)
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[Presentation] アノード酸化の基礎2015
Author(s)
小野幸子
Organizer
表面技術協会 夏季セミナー表面処理基礎講座(I)
Place of Presentation
早稲田大学（東京都）
Year and Date
2015-06-18
Related Report
Invited
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[Presentation] Chemical State Analyses of Aluminum, Anions and Residual H2O in Anodic Oxide Films Formed on Aluminum in a Sulfuric or Oxalic Acid Solution2014
Author(s)
M. Shima, K. Tsutsumi1, K. Yazawa, M. Hashimoto, T. Kanazawa, N. Endo, H. Hashiguchi, M. Kadoi, T. Suzuki, H. Onodera, H. Asoh and S. Ono
Organizer
The 7th International Symposium on Surface Science (ISSS-7)
Place of Presentation
Shimane, Japan
Year and Date
2014-11-06
Related Report
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[Presentation] アノード酸化の基礎2014
Author(s)
小野幸子
Organizer
表面技術協会 夏季セミナー表面処理基礎講座（Ⅰ）
Place of Presentation
工学院大学
Year and Date
2014-06-25
Related Report
Invited
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[Presentation] Chemical State Analyses of Anodic Oxide Films on Aluminum in a Sulfuric Acid and Oxalic Acid Solution before and after Sealing2014
Author(s)
M. Shima, K. Tsutsumi, K. Yazawa, M. Hashimoto, T. Kanazawa, N. Endo, H. Hashiguchi, T. Suzuki, H. Onodera, H. Asoh and S. Ono
Organizer
2nd International Symposium on Anodizing Science and Technology (AST 2014)
Place of Presentation
Sapporo, Japan
Year and Date
2014-06-05
Related Report
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[Presentation] Nano-structural Analysis of Anodic Oxide Film on Aluminum before and after a Sealing Treatment in Boiling Water2014
Author(s)
K. Tsutsumi, M. Shima, K. Yazawa, M. Hashimoto, T. Kanazawa, N. Endo, H. Hashiguchi, H. Onodera, T. Suzuki, H. Asoh and S. Ono
Organizer
2nd International Symposium on Anodizing Science and Technology (AST 2014)
Place of Presentation
Sapporo, Japan
Year and Date
2014-06-05
Related Report
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