Crystal growth of high-quality InGaSb by cotrolling convection

• Project/Area Number: 25289270
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Metal making/Resorce production engineering
• Research Institution: Japan Aerospace EXploration Agency
• Principal Investigator: Inatomi Yuko 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 教授 (50249934)
• Co-Investigator(Kenkyū-buntansha): 早川 泰弘 静岡大学, 電子工学研究所, 教授 (00115453)
• Co-Investigator(Renkei-kenkyūsha): Mukannan, Arivanandhan 静岡大学, 電子工学研究所, 助教 (50451620)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000); Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2014: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000); Fiscal Year 2013: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
• Keywords: 対流制御 / 均一組成結晶 / InGaSb / 不純物縞 / 界面カイネティクス / 面方位依存性 / 成長速度 / 結晶工学 / 結晶成長

Outline of Final Research Achievements

The following phenomena were found under reduced convection conditions. 1) The composition concentrations in the crystals become more uniform than the normal condition, and this leads to improved quality with less defects; it also accelerates the growth of the crystals. Under the normal condition the growth rate was damped because buoyancy convection prevented diffusive transport of GaSb in InGaSb melt to the growth surface from the feed. 2) The initial growth morphology for both (111)A and (111)B samples were almost flat because of the anisotropic growth kinetics. The differences of the dissolution length and growth rates can be explained by attribution of different number bonds in unit cell at the crystal surfaces.

Research Products

• [Journal Article] Summary of Alloy Semiconductor Experiment (2017)
  • Author(s): 稲富裕光, 早川泰弘, 岡野泰則, 石川毅彦
  • Journal Title: International journal of microgravity science and application Volume: 34 Issue: 1 Pages: 340110
  • DOI: 10.15011//jasma.34.340110
  • NAID: 130007842571
  • ISSN: 2188-9783
  • Year and Date: 2017-01-31
  • Open Access / Acknowledgement Compliant
• [Journal Article] Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors (2017)
  • Author(s): Yasuhiro Hayakawa, Velu Nirmal Kumar, Mukkannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Kaoruho Sakata, Tetsuo Ozawa, Yasunori Okano, and Yuko Inatomi
  • Journal Title: International journal of microgravity science and application Volume: 34 Issue: 1 Pages: 340111
  • DOI: 10.15011//jasma.34.340111
  • NAID: 130007842573
  • ISSN: 2188-9783
  • Year and Date: 2017-01-31
  • Open Access / Acknowledgement Compliant
• [Journal Article] A numerical simulation model by volume averaging for the dissolution process of GaSb into InSb in a sandwich system (2016)
  • Author(s): T. Yamamoto, H. Mirsandi, X. Jin, Y. Takagi, Y. Okano, Y. Inatomi, Y. Hayakawa and S. Dost
  • Journal Title: Numer. Heat Tr. B-Fund. Volume: 70 Issue: 5 Pages: 441-458
  • DOI: 10.1080/10407790.2016.1230397
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Effects of varying indium composition on the thermoelectric properties of InxGa1－xSb ternary alloys (2016)
  • Author(s): Nirmal Kumar Velu, Mukkannan Arivanandhan, Tadanobu Koyama, Haruhiko Udono, Yuko Inatomi, Yasuhiro Hayakawa
  • Journal Title: Applied Physics A Volume: 122 Issue: 10 Pages: 8851-5
  • DOI: 10.1007/s00339-016-0409-9
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station (2016)
  • Author(s): V. Nirmal Kumar, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, K. Sakata, T. Ozawa, Y. Okano, Y. Inatomi and Y. Hayakawa
  • Journal Title: npj Microgravity Volume: 2 Issue: 1 Pages: 160261-7
  • DOI: 10.1038/npjmgrav.2016.26
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Growth of InxGa1-xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments (2015)
  • Author(s): Y. Inatomi, K. Sakata, M. Arivanandhan, G. Rajesh, V. Nirmal Kumar, T. Koyama, Y. Momose, T. Ozawa, Y. Okano, Y. Hayakawa
  • Journal Title: npj Microgravity Volume: 1 Issue: 1 Pages: 1-6
  • DOI: 10.1038/npjmgrav.2015.11
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] A numerical study on growth process of InGaSb crystal under microgravity field with considering interfacial kinetics (2015)
  • Author(s): Y. Okano, H. Mirsandi, Y. Inatomi, Y. Hayakawa and S. Dost
  • Journal Title: Microgravity Science and Technology Volume: 印刷中 Issue: 5 Pages: 313-320
  • DOI: 10.1007/s12217-015-9417-1
  • Peer Reviewed / Open Access
• [Journal Article] Viscosity of Molten InSb, GaSb, and InxGa1-xSb alloy semiconductors (2014)
  • Author(s): K. Sakata, M. Mukai, G. Rajesh, M. Arivanandhan, Y. Inatomi, T. Ishikawa, Y. Hayakawa
  • Journal Title: International Journal of Thermophysics Volume: 35 Issue: 2 Pages: 352-360
  • DOI: 10.1007/s10765-014-1582-8
  • Peer Reviewed
• [Journal Article] Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station (2014)
  • Author(s): K. Sakata, M. Midori, M. Arivanandhan, G. Rajesh, T. Ishikawa, Y. Inatomi and Y. Hayakawa
  • Journal Title: TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, AEROSPACE TECHNOLOGY JAPAN Volume: 12 Issue: ists29 Pages: Ph_31-Ph_35
  • DOI: 10.2322/tastj.12.Ph_31
  • NAID: 130004701804
  • ISSN: 1884-0485
  • Peer Reviewed / Open Access
• [Journal Article] Thermal Properties of Molten InSb, GaSb, and InxGa1-xSb Alloy Semiconductor Materials in Preparation for Crystal Growth Experiment on International Space Station (2014)
  • Author(s): K. Sakata, M. Mukai, G. Rajesh, M. Arivanandhan, Y. Inatomi, T. Ishikawa, Y. Hayakawa
  • Journal Title: Advances in Space Research Volume: 53 Issue: 4 Pages: 689-695
  • DOI: 10.1016/j.asr.2013.12.002
  • Peer Reviewed
• [Journal Article] 国際宇宙ステーションでの結晶成長実験に関する溶融InGaSbの粘度測定 (2013)
  • Author(s): 阪田薫穂, 向井碧, Govindasamy Rajesh，Mukannan Arivanandan, 稲富裕光, 石川毅彦, 早川泰弘
  • Journal Title: 熱物性 Volume: 27 Pages: 152-156
  • Peer Reviewed
• [Presentation] A Numerical Simulation Study for Predicting the Dissolution Length in Growth of InGaSb under the Microgravity Conditions of the ISS (2016)
  • Author(s): X. Jin, T. Yamamoto, Y. Takagi, Y. Okano, Y. Inatomi, Y. Hayakawa and S. Dost
  • Organizer: 11th Asian Microgravity Symposium (AMS 2016)
  • Place of Presentation: Hokkaido University, Sapporo, Japan
  • Year and Date: 2016-10-25
  • Int'l Joint Research
• [Presentation] Growth and Dissolution Rates of InGaSb Crystal under Reduced Convection Condition” (2016)
  • Author(s): Yuko Inatomi, Velu Nirmal Kumar, Mukannan Arivanandhan, Govindasamy Rajesh, Kaoruho Sakata, Tadanobu Koyama, Yoshimi Momose, Yasunori Okano and Yasuhiro Hayakawa
  • Organizer: 11th Asian Microgravity Symposium (AMS 2016)
  • Place of Presentation: Hokkaido University, Sapporo, Japan
  • Year and Date: 2016-10-25
  • Int'l Joint Research
• [Presentation] 国際宇宙ステーション内の長期微小重力環境下におけるGaSb(111)Ga面及びSb面種結晶からのInGaSb三元混晶結晶成長 (2016)
  • Author(s): 早川泰弘, V. Nirmal Kumar, M. Arivanandhan, 小山忠信, 百瀬与志美, 阪田薫穂, 小澤哲夫, 岡野泰則, 稲富裕光
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ, 新潟県新潟市
  • Year and Date: 2016-09-13
• [Presentation] A Numerical Study on the Growth Process of InGaSb Crystals under Microgravity Onboard the International Space Station (2016)
  • Author(s): X. Jin, T. Yamamoto, Y. Takagi, Y. Okano, and Y. Inatomi, Y. Hayakawa and S. Dost
  • Organizer: The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2016-08-07
  • Int'l Joint Research
• [Presentation] Japanese Material Research under Microgravity (2016)
  • Author(s): Yuko Inatomi
  • Organizer: The 3rd Japan-China Workshop on Material Science in Space
  • Place of Presentation: University of the Ryukyus, Okinawa, Japan
  • Year and Date: 2016-05-25
  • Int'l Joint Research
• [Presentation] 微小重力環境下におけるInGaSb凝固に関する数値解析 (2016)
  • Author(s): 岡野泰則, Jin Xin, 山本卓也, 高木洋平, 早川泰弘, 稲富裕光
  • Organizer: 第53回日本伝熱シンポジウム
  • Place of Presentation: 大阪国際会議場, 大阪府大阪市
  • Year and Date: 2016-05-24
• [Presentation] 国際宇宙ステーション内InGaSb結晶成長に関する数値解析 (2016)
  • Author(s): 岡野泰則, Jin Xin, 山本卓也, 高木洋平, 早川泰弘, 稲富裕光
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス, 日本
  • Year and Date: 2016-03-19
• [Presentation] Microgravity Experiment of InGaSb Alloy Semiconductor Crystals at International Space Station (2015)
  • Author(s): Y. Hayakawa, V.N. Kumar, G. Rajesh, M. Arivanandhan, T. Koyama,Y. Momose, T. Ozawa, Y. Okano and Y. Inatomi
  • Organizer: The 60th DAE Solid State Physics Symposium
  • Place of Presentation: Amity University, Noida, Uttar Pradesh, Inida
  • Year and Date: 2015-12-21
  • Int'l Joint Research / Invited
• [Presentation] Numerical Simulation of InGaSb Crystals growth under Numerical Simulation of InGaSb Crystals growth under Micro-Gravity environment onboard the International Space Station (2015)
  • Author(s): X. Jin, H. Mirsandi, T. Yamamoto, Y. Takagi, Y. Okano, Y. Inatomi, Y. Hayakawa and S. Dost
  • Organizer: Inter-Academia 2015
  • Place of Presentation: Congress Center in Hamamatsu ACT CITY, Japan
  • Year and Date: 2015-09-28
  • Int'l Joint Research
• [Presentation] Growth Properties of InGaSb Ternary Alloys Under Microgravity and Normal Gravity Conditions (2015)
  • Author(s): Velu Nirmal Kumar, Govindasamy Rajesh, Tadanobu Koyoma, Yoshimi Momose, Yuko Inatomi, Kaoruho Sakata, Takehiko Ishikawa, Masahito Takayanagi, Shigeki Kamigaichi, Tetsuo Ozawa, Yasunori Okano, Yasuhiro Hayakawa
  • Organizer: The Joint Conference of 6th International Symposium on Physical Sciences in Space (ISPS-6) and 10th International Conference on Two-Phase Systems for Space and Ground Applications (ITTW2015)
  • Place of Presentation: Doshisha University, Kyoto, Japan
  • Year and Date: 2015-09-14
  • Int'l Joint Research
• [Presentation] Growth Properties of InGaSb under Normal and Microgravity Condition at International Space Station (2015)
  • Author(s): V. Nirmal Kumar, G. Rajesh, M. Arivanandhan, T. Koyama, Y. Momose, K. Sakata, T. Ishikawa, T. Ozawa, Y. Okano, Y. Inatomi and Y. Hayakawa
  • Organizer: SRM University - Shizuoka University Joint Symposium
  • Place of Presentation: Shizuoka University, Hamamatsu, Japan
  • Year and Date: 2015-09-03
  • Int'l Joint Research
• [Presentation] Morphological change of S/L interface in semiconductor solution growth under reduced convection condition (2015)
  • Author(s): Yuko Inatomi, Mukannan Arivanandhan, Velu Nirmal Kumar, Haryo Mirsandi, Tadanobu Koyama, Yoshimi Momose, Tetsuo Ozawa, Takehiko Ishikawa, Yasunori Okano, Yasuhiro Hayakawa
  • Organizer: The 30th International Symposium on Space Technology and Science (30th ISTS)
  • Place of Presentation: Kobe International Conference Center, Kobe, Japan
  • Year and Date: 2015-07-04
  • Int'l Joint Research
• [Presentation] A Numerical Simulation Study on the Growth Process of InGaSb Crystals under Microgravity by Using Open FOAM (2015)
  • Author(s): Xin Jin, Haryo Mirsandi, Takuya Yamamoto, Yohei Takagi, Yasunori Okano, Yuko Inatomi, Yasuhiro Hayakawa, Sadik Dost
  • Organizer: The 30th International Symposium on Space Technology and Science (30th ISTS)
  • Place of Presentation: Kobe International Conference Center, Kobe, Japan
  • Year and Date: 2015-07-04
  • Int'l Joint Research
• [Presentation] Crystal growth of InxGa1-xSb under Reduced Convection Condition (2015)
  • Author(s): Y. Inatomi, Kaoruho Sakata, M. Arivanandhan, G. Rajesh, V. Nirmal Kumar, T. Koyama, Y. Momose, T. Ozawa, Y. Okano, and Y. Hayakawa
  • Organizer: 3rd International Conference on Nanoscience and Nanotechnology (ICONN 2015)
  • Place of Presentation: SRM Universit, Tamilnadu, India
  • Year and Date: 2015-02-04 – 2015-02-06
  • Invited
• [Presentation] Growth Process of InGaSb under Microgravity and Normal Gravity Conditions (2015)
  • Author(s): V. Nirmal Kumar, M. Arivanandhan, G. Rajesh, Y. Katsumata, T. Koyama, Y. Momose, Y. Inatomi, K. Sakata, T. Ishikawa, M. Takayanagi, S. Kamigaichi, T. Ozawa, Y. Okano and Y. Hayakawa
  • Organizer: 2015 International Symposium toward the Future of Advanced Researches in Shizuoka University
  • Place of Presentation: Shizuoka University. Hamamatsu, Japan
  • Year and Date: 2015-01-27 – 2015-01-28
• [Presentation] 国際宇宙ステーション内の微小重力環境下における混晶半導体結晶成長 (2015)
  • Author(s): 早川泰弘, 稲富裕光, 阪田薫穂, 石川毅彦, 高柳昌弘, 上垣内茂樹, M. Arivanandhan, V. Nirmal Kumar, G. Rajesh, 小山忠信, 百瀬与志美, 小澤哲夫, 岡野泰則
  • Organizer: 第29回宇宙環境利用シンポジウム
  • Place of Presentation: 宇宙航空研究開発機, 神奈川県相模原市
  • Year and Date: 2015-01-24 – 2015-01-25
• [Presentation] Effect of gravity on the growth of InGaSb ternary alloy semiconductor bulk crystals (2015)
  • Author(s): Y. Katsumata, M. Arivanandhan, V. Nirmal Kumar, G. Rajesh, T. Koyama, Y. Momose, Y. Inatomi, K. Sakata, T. Ishikawa, T. Ozawa, Y. Okano and Y. Hayakawa
  • Organizer: SRM University - Shizuoka University Joint Symposium
  • Place of Presentation: Shizuoka University, Hamamatsu, Japan
  • Year and Date: 2015-01-07
• [Presentation] Japanese Crystal Growth Experiments on International Space Station (2014)
  • Author(s): Yuko Inatomi and Masahiro Takayanagi
  • Organizer: The 2nd China-Japan Workshop on Material Science in Space
  • Place of Presentation: Jinan, Shandong Province, China
  • Year and Date: 2014-12-20 – 2014-12-22
• [Presentation] InGaSb alloy semiconductor growth under 1G and microgravity (2014)
  • Author(s): Y. Hayakawa, M. Arivanandhan, V. Nirmal Kumar, G. Rajesh, Y. Katsumata, T. Koyama, Y. Momose, Y. Inatomi, K. Sakata, T. Ishikawa, M. Takayanagi, S. Kamigaichi, T. Ozawa and Y. Okano
  • Organizer: The 2nd China-Japan Workshop on Material Science in Space
  • Place of Presentation: Jinan, Shandong Province, China
  • Year and Date: 2014-12-20 – 2014-12-22
• [Presentation] Numerical investigation of melting and growth of InGaSb by using temperature gradient method (2014)
  • Author(s): Y. Okano, H. Mirsandi, T. Yamamoto, Y. Takagi, Y. Inatomi and Y. Hayakawa
  • Organizer: The 2nd China-Japan Workshop on Material Science in Space
  • Place of Presentation: Jinan, Shandong Province, China
  • Year and Date: 2014-12-20 – 2014-12-22
• [Presentation] InGaSb結晶成長に対する重力効果 ―国際宇宙ステーション内の微小重力下と1G下実験― (2014)
  • Author(s): Velu Niramal Kumar, Mukannan Arivanandhan, Govindasamy Rajesh, 小山忠信, 百瀬与志美, 稲富裕光, 阪田薫穂, 石川毅彦, 高柳昌弘, 上垣内茂樹, 小澤哲夫, 岡野泰則, 早川泰弘
  • Organizer: 日本マイクログラビティ応用学会第26回学術講演会
  • Place of Presentation: イーグレ姫路, 兵庫県姫路市
  • Year and Date: 2014-11-26 – 2014-11-28
• [Presentation] ISSにおけるInGaSb結晶成長実験に対する数値シミュレーション (2014)
  • Author(s): ミルサンディ ハルヨ, 山本卓也, 高木洋平, 岡野泰則, 稲富裕光, 早川泰弘
  • Organizer: 日本マイクログラビティ応用学会第26回学術講演会
  • Place of Presentation: イーグレ姫路, 兵庫県姫路市
  • Year and Date: 2014-11-26 – 2014-11-28
• [Presentation] InGaSb混晶半導体結晶成長に対する重力効果―国際宇宙ステーション実験― (2014)
  • Author(s): 早川泰弘, Mukannan Arivanandhan, Velu Niramal Kumar, Govindasamy Rajesh, 小山忠信, 百瀬与志美, 稲富裕光, 阪田薫穂, 石川毅彦, 高柳昌弘, 上垣内茂樹, 小澤哲夫, 岡野泰則
  • Organizer: 第44回結晶成長国内会議
  • Place of Presentation: 学習院創立百周年記念会館, 東京都豊島区
  • Year and Date: 2014-11-06 – 2014-11-08
• [Presentation] Crystal growth of InxGa1-xSb alloy semiconductor under microgravity at International Space Station (ISS) and comparison with ground based experiment (2014)
  • Author(s): Y. Inatomi, K. Sakata, T. Ishikawa, M. Takayanagi, S. Yoda, Y. Kamigaichi, M. Arivanandhan, G. Rajesh, V. Nirmal Kumar, T. Koyama, Y. Momose, T. Ozawa, Y. Okano and Y. Hayakawa
  • Organizer: 10th Asian Microgravity Symposium
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2014-10-28 – 2014-10-31
• [Presentation] A numerical study on growth process of InGaSb crystal under microgravity field with considering interfacial kinetics (2014)
  • Author(s): Y. Okano, H. Mirsandi, Y. Inatomi, Y. Hayakawa and S. Dost
  • Organizer: 10th Asian Microgravity Symposium
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2014-10-28 – 2014-10-31
• [Presentation] 微小重力環境下でのInGaSb結晶成長における界面カイネティクスの影響に関する数値解析 (2014)
  • Author(s): ハルヨ・ミルサンディ, 山本卓也, 高木洋平, 岡野泰則, 稲富裕光, 早川泰弘
  • Organizer: 第63回理論応用力学講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス, 東京都目黒区
  • Year and Date: 2014-09-26 – 2014-09-28
• [Presentation] Growth and properties of InGaSb alloy semiconductor crystals grown under microgravity and 1G conditions (2014)
  • Author(s): V. Nirmal Kumar, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, Y. Inatomi, K. Sakata, T. Ishikawa, M. Takayanagi, S. Kamigaichi, T. Ozawa, Y. Okano, Y. Hayakawa
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス, 北海道札幌市
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Growth of InGaSb alloy semiconductor crystal under 1G condition as a preliminary study for microgravity experiment at International Space Station (2014)
  • Author(s): V. Nirmal Kumar, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, Y. Inatomi, K. Sakata, T. Ishikawa, M. Takayanagi, S. Kamigaichi, T. Ozawa, Y. Okano and Y. Hayakawa
  • Organizer: 13th International Conference on Global Research and Education (Inter-Academia 2014)
  • Place of Presentation: Riga Technical University, Riga, Latvia
  • Year and Date: 2014-09-10 – 2014-09-12
• [Presentation] First Experiment of Alloy Semiconductor Project in ISS (2014)
  • Author(s): Yuko Inatomi, Kaoruho Sakata, Yasuhiro Hayakawa, Takehiko Ishikawa, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Krishnasamy Sankaranarayanan, Akira Tanaka, Tetsuo Ozawa, Yasunori Okano, Masahiro Takayanagi, Shinichi Yoda, and Y. Kamigaichi
  • Organizer: 40th COSPAR Scientific Assembly (COSPAR MOSCOW 2014)
  • Place of Presentation: Moscow, Russia
  • Year and Date: 2014-08-02 – 2014-08-10
• [Presentation] InGaSb混晶半導体作製に及ぼす重力の影響 (2014)
  • Author(s): 岡野泰則, 高木洋平, ハルヨ・ミルサンディ, 延岡雅弘, 稲富裕光, 早川泰弘
  • Organizer: 化学工学会第79年会
  • Place of Presentation: 岐阜大学, 柳戸キャンパス, 阜県岐阜市
• [Presentation] InGaSb結晶成長過程における界面カイネティクスの影響に関する数値解析 (2014)
  • Author(s): Haryo Mirsandi, 高木洋平, 岡野泰則, 延岡雅弘, 稲富裕光, 早川泰弘
  • Organizer: 化学工学会第79年会
  • Place of Presentation: 岐阜大学, 柳戸キャンパス, 阜県岐阜市
• [Presentation] A numerical simulation study on the interface kinetics during the growth process of InGaSb crystal (2013)
  • Author(s): H. Mirsandi, Y. Takagi, T. Yamamoto, Y. Inatomi, Y. Hayakawa, S. Dost, and Y. Okano
  • Organizer: The 26th International Symposium on Chemical Engineering (ISChE 2013)
  • Place of Presentation: BEXCO, Busan, Korea
• [Presentation] Japanese Crystal Growth Research on International Space Station (2013)
  • Author(s): Yuko Inatomi, Yasuhiro Hayakawa, Mukannan Arivanandhan, Kyoichi Kinoshita, Yasutomo Arai, Izumi Yoshizaki, Masahiro Takayanagi
  • Organizer: The 15th Takayanagi Kenjiro memorial symposium
  • Place of Presentation: Shizuoka University, Japan
  • Invited
• [Presentation] INGASB ALLOY SEMICONDUCTOR CRYSTAL GROWTH UNDER REDUCED CONVECTION CONDITION (2013)
  • Author(s): Yuko Inatomi, Kaoruho Sakata, Mukannan Arivanandhan, Govindasamy Rajesh, Yasuhiro Hayakawa, Akira Tanaka, Tetsuo Ozawa, Yasunori Okano, Takehiko Ishikawa, Masahiro Takayanagi
  • Organizer: ELGRA Biennial Symposium and General Assembly
  • Place of Presentation: Rome, Italy
• [Presentation] Crystal growth of ternary alloy semiconductor and preliminary study for microgravity experiment at International Space Station (2013)
  • Author(s): K. Sakata, M. Midori, M. Arivanandhan, G. Rajesh, T. Ishikawa, Y. Inatomi and Y. Hayakawa
  • Organizer: 29th International Symposimu on Space Technology and Science
  • Place of Presentation: Nagoya, Japan
• [Presentation] ISSにおけるAlloy Semiconductorプロジェクトの現状 (2013)
  • Author(s): 稲富裕光, 阪田薫穂，早川泰弘，石川毅彦, Mukannan Arivanandan, Govindasamy Rajesh，小山忠信, 百瀬与志美, 田中 昭，小澤哲夫, 岡野泰則, 高柳昌弘, 上垣内茂樹
  • Organizer: 日本マイクログラビティ応用学会第26回学術講演会
  • Place of Presentation: 芝浦工業大学, 東京都江東区