Self-assemmbly of ideal quantum dots by droplet epitaxy

• Project/Area Number: 25390011
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Nanostructural physics
• Research Institution: National Institute for Materials Science
• Principal Investigator: Mano Takaaki 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 (60391215)
• Co-Investigator(Renkei-kenkyūsha): KURODA Takashi 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主席研究員 (00272659) ; OHTAKE Akihiro 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 (30267398)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: 量子ドット / 分子線エピタキシー / 自己形成 / もつれ光子対 / 量子通信 / ガリウム砒素 / もつれ合い光子対 / 結晶成長 / 化合物半導体 / エレクトロルミネッセンス素子 / 偏光 / もつれ合い / インジウム燐 / 量子情報

Outline of Final Research Achievements

We studied self-assembly of highly symmetric quantum dots (QDs) by droplet epitaxy for the application to high quality entangled photon emission. We investigated the details of Ga droplet formation and found out the nucleation process, which is important for control the droplet density and size. We also established the impurity doping on GaAs (111)A. By realizing both n- and p-type doping using Si, we succeeded in light emission from the highly symmetric QDs by current injection. In addition, we successfully formed highly symmetric InAs QDs, which emit light at telecom wavelengths.

Research Products

• [Int'l Joint Research] University of Milano Bicocca(イタリア)
• [Int'l Joint Research] University of Toulouse(フランス)
• [Int'l Joint Research] Eindhoven University of Technology(オランダ)
• [Int'l Joint Research] National Chiao Tung University(台湾)
• [Journal Article] Stable and efficient collection of single photons emitted from a semiconductor quantum dot into a single-mode optical fiber (2016)
  • Author(s): H. Kumano, T. Harada, I. Suemune, H. Nakajima, T. Kuroda, T. Mano, K. Sakoda, S. Odashima, and H. Sasakura
  • Journal Title: Applied Physics Express Volume: 9 Issue: 3 Pages: 032801-032801
  • DOI: 10.7567/apex.9.032801
  • NAID: 120005972930
  • Peer Reviewed
• [Journal Article] Precise shape engineering of epitaxial quantum dots by growth kinetics (2015)
  • Author(s): S. Bietti, J. Bocquel, S. Adomo, T. Mano, J. G. Keizer, P. M. Koenraad, and S. Sanguinetti
  • Journal Title: Physical Review B Volume: 92 Issue: 7
  • DOI: 10.1103/physrevb.92.075425
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion (2015)
  • Author(s): N. Ha, T. Mano, Y.-L. Chou, Y.-N Wu, S.-J. Cheng, J. Bocquel, P. M. Koenraad, A. Ohtake, Y. Sakuma, K. Sakoda, and T. Kuroda
  • Journal Title: Physical Review B Volume: 92 Issue: 7
  • DOI: 10.1103/physrevb.92.075306
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] (2)‘Extremely high- and low-density of Ga droplets on GaAs{111}A,B: Surface-polarity dependence (2015)
  • Author(s): A. Ohtake, N. Ha, and T. Mano
  • Journal Title: Crystal Growth & Design Volume: 15 Issue: 1 Pages: 485-488
  • DOI: 10.1021/cg501545n
  • Peer Reviewed
• [Journal Article] Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A (2015)
  • Author(s): N. Ha, T. Mano, T. Kuroda, K. Mitsuishi, A. Ohtake, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
  • Journal Title: Jpn. J. Appl. Phys. Volume: 54 Issue: 4S Pages: 04DH07-04DH07
  • DOI: 10.7567/jjap.54.04dh07
  • NAID: 210000145031
  • Peer Reviewed
• [Journal Article] Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions (2014)
  • Author(s): A. Ohtake, T. Mano, A. HAgiwara, and J. Nakamura
  • Journal Title: Crystal Growth & Design Volume: 14 Issue: 6 Pages: 3110-3115
  • DOI: 10.1021/cg500355f
  • Peer Reviewed
• [Journal Article] Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy (2014)
  • Author(s): X. Liu, N. Ha, H. Nakajima, T. Mano, T. Kuroda, B. Urbaszek, H. Kumano, I. Suemune, Y. Sakuma, and K. Sakoda
  • Journal Title: Phys. Rev. B Volume: 90 Issue: 8
  • DOI: 10.1103/physrevb.90.081301
  • Peer Reviewed / Open Access
• [Journal Article] Charge tuning in [111] grown GaAs droplet quantum dots (2014)
  • Author(s): L. Bouet, M. Vidal, T. Mano, N. Ha, T. Kuroda, M. V. Durnev, M. M. Glazov, E. L. Evchenko, X. Marie, T. Amand, K. Sakoda, G. Wang, B. Urbaszek
  • Journal Title: Applied Physics Letters Volume: 105 Issue: 8
  • DOI: 10.1063/1.4894174
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommuni -cation wavelengths on InP (111)A (2014)
  • Author(s): N. Ha, X. Liu, T. Mano, T. Kuroda, K. Mitsuishi, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, K. Sakoda
  • Journal Title: Applied Physics Letters Volume: Vol. 104 Issue: 14 Pages: 143106-143106
  • DOI: 10.1063/1.4870839
  • Peer Reviewed
• [Journal Article] Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field (2014)
  • Author(s): G. Sallen, S. Kunz, T. Amand, L. Bouet, T. Kuroda, T. Mano, D. Paget, O. Krebs, X. Marie, K. Sakoda, B. Urbaszek
  • Journal Title: Nature Communications Volume: Vol. 5 Issue: 1
  • DOI: 10.1038/ncomms4268
  • Peer Reviewed
• [Journal Article] Symmetric quantum dots as efficient sources of highly entangled photons : Violation of Bell ' s inequality without spectral and temporal filtering (2013)
  • Author(s): T. Kuroda, T. Mano, N. Ha, H. Nakajima, H Kumano, B. Urbaszek, M. Jo, M. Abbarachi, Y. Sakuma, K. Sakoda, I Suemune, X. Marie, T. Amand
  • Journal Title: Physical Review B Volume: Vol. 88 Issue: 4
  • DOI: 10.1103/physrevb.88.041306
  • Peer Reviewed
• [Presentation] (111)A基板上の格子不整合系エピタキシーの諸現象：ドット形成と歪み緩和の理解と制御にむけて (2015)
  • Author(s): 間野高明, 大竹晃浩, HA Neul, 黒田隆, 佐久間芳樹, 迫田和彰
  • Organizer: 第１１回量子ナノ材料セミナー
  • Place of Presentation: 電気通信大学
  • Year and Date: 2015-12-08
  • Invited
• [Presentation] GaAs(111)A基板上の高対称性量子ドットLEDの作製 (2015)
  • Author(s): 間野高明, 黒田隆, HA Neul, 野田武司, 佐久間芳樹, 迫田和彰
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-13
• [Presentation] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy (2015)
  • Author(s): HA Neul, 間野高明, 黒田隆, Shun-Jen Cheng, Paul M. Koenraad, 大竹晃浩, 佐久間芳樹, 迫田和彰
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-13
• [Presentation] (111)A 面上量子ドットにおける励起子微細構造分裂の高精度評価 (2015)
  • Author(s): 中島秀朗、熊野英和、劉祥明、間野高明、黒田隆、末宗幾夫
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Entangled photon emission at temperatures up to 60 K from droplet epitaxial quantum dots (2015)
  • Author(s): 劉祥明、黒田隆、間野高明、中島秀朗、熊野英和、末宗幾夫、佐久間芳樹、迫田和彰
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100) (2014)
  • Author(s): T. Mano, A.Ohtake, T. Kuroda, N. Ha, X. Liu, K. Mitsuishi, A. Hagiwara, J. Nakamura, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
  • Organizer: 2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures
  • Place of Presentation: フィレンツェ
  • Year and Date: 2014-05-16
  • Invited
• [Presentation] InAs quantum dots formed on InP(111)A by droplet epitaxy (2014)
  • Author(s): T. Mano, N. Ha, X. Liu, T. Kuroda, K. Mitsuishi, T. Noda, A. Castellano, S. Sanguinetti, Y. Sakuma, and K. Sakoda
  • Organizer: 8th International conference on Quantum Dots
  • Place of Presentation: ピサ
  • Year and Date: 2014-05-11 – 2014-05-16
• [Presentation] Formation of InAs quantum dots on InP(111)A by droplet epitaxy and their optical emission at 1.3μm and 1.55μm (2014)
  • Author(s): Ha Neul、劉祥明、間野高明、黒田隆、三石和貴、野田武司、佐久間芳樹、迫田和彰
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
• [Presentation] 液滴エピタキシー法による格子整合系量子ナノ構造の自己形成とその光物性 (2013)
  • Author(s): 間野高明、定昌史、黒田隆、野田武司、佐久間芳樹、迫田和彰
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学
  • Invited
• [Presentation] ＩｎＰ（111）Ａ基板上のＩｎＡｓドットの液滴エピタキシー (2013)
  • Author(s): 野田武司、間野高明、川津琢也、榊裕之
  • Organizer: 第７４回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学
• [Remarks] 物質・材料研究機構先端フォトニクス材料ユニットホームページ
  • URL: http://www.nims.go.jp/units/apm/
• [Remarks] 世界最高性能の量子ドットもつれ光子源の開発
  • URL: http://www.nims.go.jp/news/press/2013/07/p201307290.html