| Project/Area Number |
25390033
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials engineering
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
Koike Kazuto 大阪工業大学, 工学部, 教授 (40351457)
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| Co-Investigator(Kenkyū-buntansha) |
原田 義之 大阪工業大学, 工学部, 准教授 (20288757)
矢野 満明 大阪工業大学, 工学部, 教授 (40200563)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | 酸化モリブデン / 分子線エピタキシー / 結晶構造解析 / 熱処理効果 / 高エネルギー粒子線耐性 / 結晶構造制御 / エピタキシャル成長 / 放射線耐性 / 酸化タングステン / エレクトロクロミック / ヘテロ接合 / Transition metal oxide / Molecular beam epitaxy / Molybdenum trioxide / Tungsten trioxide / 三酸化モリブデン / ワイドギャップ半導体 / サファイア基板 / 構造制御 |
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| Outline of Final Research Achievements |
Molybdenum trioxide (MoO3) has attracted much attention for such application fields as resistive random access memories, electrochromic displays and microbatteries. Therefore, growth and characterization of amorphous/polycrystalline MoO3 films have been studied extensively, however, there are few reports on single-crystalline MoO3 films. In this work, we studied molecular beam epitaxial (MBE) growth of MoO3 films on sapphire and LSAT substrates and reported that high-quality orthorhombic-phase MoO3 films were successfully grown on these substrates (Details are described in the next section). Our experimental results may be useful for the application of MoO3 films to novel functional devices in the next generation.
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