| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
Selective growth of group-III nitride semiconductors on patterned GaAs substrate was carried out using anisotropic etching, in order for the realization of non-polar nitride semiconductor crystals. It was successfully performed that anisotropic and isotropic etching resulted in the formation of (111)A facet structure and the formation of both (111)A and (111)B facets structures, respectively. Selective growth of InN was succeeded on (111)B surface of the patterned GaAs(110) substrate by utilizing the difference in the thermal stability of crystal plane of InN crystal.
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