| Project/Area Number |
25390066
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Crystal engineering
|
|---|
| Research Institution | High Energy Accelerator Research Organization (2014-2016)
Nagoya University (2013) |
|---|
Principal Investigator |
Jin Xiuguang 大学共同利用機関法人高エネルギー加速器研究機構, 加速器研究施設, 特別助教 (20594055)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
Yamamoto Naoto 名古屋大学, 工学研究科, 助教 (60377918)
Torikai Eiko 山梨大学, 医学工学総合研究部, 教授 (20188832)
|
|---|
| Project Period (FY) |
2013-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
|
|---|
| Keywords | スピン電子 / 超格子 / 歪み補償超格子 / スピン緩和 / 注入 / スピン寿命 / スピン偏極度 / 欠陥 / スピン注入 / スピン情報 / 歪み超格子 |
|---|
| Outline of Final Research Achievements |
In order to inject the spin-polarized electron into Si and Ge materials, a new GaAs/GaAsP strain-compensated superlattice was designed and fabricated. In the strain-compensated superlattice, an opposing strain is introduced in the barrier layers to offset the strain in the quantum well layers so that no critical thickness limitation exists on the overall thickness of the SL structure. As a result, compared to the conventional strained superlattice, the crystal quality was much improved using the strain-compensated SL structure. In addition, a highest spin polarization of 92% was also achieved.
|
