Quantitative observation of surface recombination velocities for 4H-SiC
| Project/Area Number |
25390067
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Kato Masashi 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80362317)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 電気・電子材料 / 電子デバイス・機器 / 材料加工・処理 / 省エネルギー / 半導体物性 / 電子・電気材料 |
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| Outline of Final Research Achievements |
The products of this research are the follows.
1) Quantitative values of surface recombination velocities and their temperature dependence are obtained for the (0001) Si- and C-faces of n-type 4H-SiC. It was also found that surface recombination velocities for 4H-SiC depend on chemicals adsorbed on the surface. 2) Methods for accuracy improvement were established in the carrier lifetime measurements based on a microwave technique. 3) Quantitative surface recombination velocities are obtained for the (0001) Si- and C-faces of p-type 4H-SiC. 4) An analysis method was established for evaluation of surface recombination velocities from experimental results under any temperature and excess carrier concentration for various samples.
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Report
(4 results)
Research Products
(31 results)
