Quantitative observation of surface recombination velocities for 4H-SiC

• Project/Area Number: 25390067
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: Kato Masashi 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80362317)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 電気・電子材料 / 電子デバイス・機器 / 材料加工・処理 / 省エネルギー / 半導体物性 / 電子・電気材料

Outline of Final Research Achievements

The products of this research are the follows.
1) Quantitative values of surface recombination velocities and their temperature dependence are obtained for the (0001) Si- and C-faces of n-type 4H-SiC. It was also found that surface recombination velocities for 4H-SiC depend on chemicals adsorbed on the surface. 2) Methods for accuracy improvement were established in the carrier lifetime measurements based on a microwave technique. 3) Quantitative surface recombination velocities are obtained for the (0001) Si- and C-faces of p-type 4H-SiC. 4) An analysis method was established for evaluation of surface recombination velocities from experimental results under any temperature and excess carrier concentration for various samples.

Research Products

• [Int'l Joint Research] Vilnius University(リトアニア)
• [Journal Article] Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC (2015)
  • Author(s): L Subacius, K Jarasiunas, P Scajev, M Kato
  • Journal Title: Measurement Science and Technology Volume: 26 Issue: 12 Pages: 125014-125014
  • DOI: 10.1088/0957-0233/26/12/125014
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron – hole scattering (2015)
  • Author(s): Masashi Kato, Yuto Mori, and Masaya Ichimura
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DP14-04DP14
  • DOI: 10.7567/jjap.54.04dp14
  • NAID: 210000145101
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Surface recombination velocities for n-type 4H-SiC treated by various processes (2014)
  • Author(s): Yuto Mori, Masashi Kato, Masaya Ichimura
  • Journal Title: Journal of Physics D: Applied Physics Volume: 47 Issue: 33 Pages: 335102-335102
  • DOI: 10.1088/0022-3727/47/33/335102
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes (2014)
  • Author(s): Yuto Mori, Masashi Kato, Masaya Ichimura
  • Journal Title: Materials Science Forum Volume: 778-780 Pages: 432-435
  • DOI: 10.4028/www.scientific.net/msf.778-780.432
  • Peer Reviewed
• [Journal Article] Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC (2014)
  • Author(s): Masashi Kato, Yuto Mori, Masaya Ichimura
  • Journal Title: Materials Science Forum Volume: 778-780 Pages: 293-296
  • DOI: 10.4028/www.scientific.net/msf.778-780.293
  • Peer Reviewed
• [Journal Article] Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate (2013)
  • Author(s): Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Hiroyuki Nagasawa
  • Journal Title: Physica Status Solidi A Volume: 210 Issue: 9 Pages: 1719-1725
  • DOI: 10.1002/pssa.201329015
  • Peer Reviewed
• [Presentation] 4H-SiCにおける表面再結合速度の解析精度向上 (2016)
  • Author(s): 小濱 公洋、加藤 正史、市村 正也
  • Organizer: 2016年 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大 大岡山キャンパス
  • Year and Date: 2016-03-19
• [Presentation] 水溶液と接触した4H-SiCにおける表面再結合 (2016)
  • Author(s): 市川 義人、加藤 正史、市村 正也
  • Organizer: 2016年 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大 大岡山キャンパス
  • Year and Date: 2016-03-19
• [Presentation] n型4H-SiC表面再結合速度の温度依存性の解析 (2015)
  • Author(s): 小濱公洋、森 裕人、加藤 正史、市村 正也
  • Organizer: 先進パワー半導体分科会 第２回講演会
  • Place of Presentation: 大阪国際交流センター
  • Year and Date: 2015-11-09
• [Presentation] Surface recombination velocities for polished p‐type 4H‐SiC (2015)
  • Author(s): Masashi Kato, Kimihiro Kohama, Hiroto Shibata, Masaya Ichimura, Tsunenobu Kimoto
  • Organizer: International Conference on Silicon Carbide and Related Materials 2015
  • Place of Presentation: Giardini Naxos, Italy
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Evaluation of Temperature Dependence of Surface Recombination Velocities for n-type 4H-SiC (2015)
  • Author(s): K. Kohama, Y. Mori, M.Kato, M. Ichimura
  • Organizer: 2015 International Conference on Solid State Devices and Materials (SSDM2015)
  • Place of Presentation: Sapporo Convention Center
  • Year and Date: 2015-09-27
  • Int'l Joint Research
• [Presentation] 4H-SiC表面再結合速度の温度依存性の定量的評価 (2015)
  • Author(s): 小濱公洋、森 祐人、加藤正史、市村正也
  • Organizer: 電子情報通信学会 電子デバイス研究会
  • Place of Presentation: 豊橋技術科学大学 VBL棟
  • Year and Date: 2015-05-28
• [Presentation] 4H-SiC 表面再結合速度における温度依存性の解析 (2015)
  • Author(s): 小濱 公洋，森 祐人，加藤 正史，市村 正也
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学 湘南キャンパス
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] n 型 4H-SiC における表面再結合速度の温度依存性に対する評価 (2014)
  • Author(s): 小濱 公洋，森 祐人，加藤 正史，市村 正也
  • Organizer: 先進パワー半導体分科会 第 1 回講演会
  • Place of Presentation: ウインクあいち
  • Year and Date: 2014-11-19 – 2014-11-20
• [Presentation] Deep levels in electron irradiated semi-insulating 4H-SiC: electronic, optical and structural observation (2014)
  • Author(s): Hiroki NAKANE, Masashi KATO, Masaya ICHIMURA, Takeshi OHSHIMA, Ivan IVANOV, Xuan TRINH, Nguyen SON, Erik JANZÉN
  • Organizer: European Conference on Silicon Carbide and Related Materials 2014
  • Place of Presentation: Grenoble
  • Year and Date: 2014-09-21 – 2014-09-25
• [Presentation] Temperature dependence of surface recombination velocities for n-type 4H-SiC (2014)
  • Author(s): Masashi KATO, Kimihiro KOHAMA, Yuto MORI, Masaya ICHIMURA
  • Organizer: European Conference on Silicon Carbide and Related Materials 2014
  • Place of Presentation: Grenoble
  • Year and Date: 2014-09-21 – 2014-09-25
• [Presentation] Microwave reflectivity from 4H-SiC in the high injection condition: Impacts of the electron-hole scattering (2014)
  • Author(s): Masashi Kato, Yuto Mori, Masaya Ichimura
  • Organizer: International Conference on Solid State Devices and Materials 2014
  • Place of Presentation: Tsukuba International Congress Center
  • Year and Date: 2014-09-08 – 2014-09-11
• [Presentation] Time-Resolved Observation of Free Carrier Absorption for Carrier Lifetime Measurement of SiC (2014)
  • Author(s): Masashi Kato, Yuto Mori, Nguyen Xuan Truyen, Masaya Ichimura
  • Organizer: IUMRS-ICA 2014
  • Place of Presentation: Fukuoka University
  • Year and Date: 2014-08-24 – 2014-08-30
• [Presentation] 高水準注入状態のSiCからの反射マイクロ波信号 ～ キャリアライフタイムの正確な評価に向けて ～ (2014)
  • Author(s): 加藤正史、森祐人、市村正也
  • Organizer: 電子情報通信学会 電子デバイス研究会
  • Place of Presentation: 名古屋大学 VBL
  • Year and Date: 2014-05-28 – 2014-05-29
• [Presentation] Silicon Carbide: Not Only for Energy Savings but Also for Energy Generation (2014)
  • Author(s): Masashi Kato
  • Organizer: EVTeC & APE Japan 2014
  • Place of Presentation: Pacifico Yokohama
  • Year and Date: 2014-05-22 – 2014-05-24
• [Presentation] Understanding of Structures of the Deep Levels in 4H-SiC: Toward Development of Bipolar SiC Devices for Motor Drives (2014)
  • Author(s): Hiroki Nakane, Masashi Kato, Masaya Ichimura
  • Organizer: EVTeC & APE Japan 2014
  • Place of Presentation: Pacifico Yokohama
  • Year and Date: 2014-05-22 – 2014-05-24
• [Presentation] 4H-SiCにおける表面再結合速度の温度依存性の評価 (2014)
  • Author(s): 小濱公洋，森佑人，加藤正史，市村正也
  • Organizer: 2014年第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] 様々な加工処理を施した4H-SiC表面のキャリアライフタイム評価 (2013)
  • Author(s): 森 祐人、加藤正史、市村正也
  • Organizer: 電子情報通信学会 電子デバイス研究会
  • Place of Presentation: 静岡大学創造科学技術大学院
• [Presentation] FCA測定装置の開発とSiCのキャリアライフタイム評価への適用 (2013)
  • Author(s): 森祐人,チュングェン加藤正史,市村正也
  • Organizer: 第７４回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス
• [Presentation] Estimation of Surface Recombination Velocities for n-type 4H-SiC Surfaces Treated by Various Processes (2013)
  • Author(s): Yuto Mori, Masashi Kato, Masaya Ichimura
  • Organizer: International Conference on Silicon Carbide and Related Materials 2013
  • Place of Presentation: 宮崎シーガイアフェニックス
• [Presentation] Correlation between Microwave Reflectivity and Exxcess Carrier Concentrations in 4H-SiC (2013)
  • Author(s): Masashi Kato, Yuto Mori, Masaya Ichimura
  • Organizer: International Conference on Silicon Carbide and Related Materials 2013
  • Place of Presentation: 宮崎シーガイアフェニックス
• [Presentation] 自由キャリア吸収を用いたキャリアライフタイム測定装置の開発とSiCの評価 (2013)
  • Author(s): 森祐人、 グェンスァンチュン、 加藤正史、 市村正也
  • Organizer: SiC及び関連半導体研究 第22回講演会
  • Place of Presentation: 埼玉会館
• [Presentation] 高水準注入条件におけるμ-PCD信号：高水準キャリアライフタイム評価への提案 (2013)
  • Author(s): 加藤 正史、森 祐人、市村 正也
  • Organizer: SiC及び関連半導体研究 第22回講演会
  • Place of Presentation: 埼玉会館
• [Presentation] 高耐圧バイポーラSiCデバイス開発のためのp型SiCエピ層の評価 (2013)
  • Author(s): 加藤正史
  • Organizer: 自動車技術会2013年春季大会
  • Place of Presentation: パシフィコ横浜
• [Patent(Industrial Property Rights)] 半導体キャリアライフタイム測定方法 (2013)
  • Inventor(s): 加藤正史、森祐人
  • Industrial Property Rights Holder: 加藤正史、森祐人
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-165683
  • Filing Date: 2013-08-09