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Quantitative observation of surface recombination velocities for 4H-SiC

Research Project

Project/Area Number 25390067
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionNagoya Institute of Technology

Principal Investigator

Kato Masashi  名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80362317)

Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords電気・電子材料 / 電子デバイス・機器 / 材料加工・処理 / 省エネルギー / 半導体物性 / 電子・電気材料
Outline of Final Research Achievements

The products of this research are the follows.
1) Quantitative values of surface recombination velocities and their temperature dependence are obtained for the (0001) Si- and C-faces of n-type 4H-SiC. It was also found that surface recombination velocities for 4H-SiC depend on chemicals adsorbed on the surface. 2) Methods for accuracy improvement were established in the carrier lifetime measurements based on a microwave technique. 3) Quantitative surface recombination velocities are obtained for the (0001) Si- and C-faces of p-type 4H-SiC. 4) An analysis method was established for evaluation of surface recombination velocities from experimental results under any temperature and excess carrier concentration for various samples.

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • 2013 Research-status Report
  • Research Products

    (31 results)

All 2016 2015 2014 2013 Other

All Int'l Joint Research (1 results) Journal Article (6 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 6 results,  Acknowledgement Compliant: 2 results) Presentation (23 results) (of which Int'l Joint Research: 2 results) Patent(Industrial Property Rights) (1 results)

  • [Int'l Joint Research] Vilnius University(リトアニア)

    • Related Report
      2015 Annual Research Report
  • [Journal Article] Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC2015

    • Author(s)
      L Subacius, K Jarasiunas, P Scajev, M Kato
    • Journal Title

      Measurement Science and Technology

      Volume: 26 Issue: 12 Pages: 125014-125014

    • DOI

      10.1088/0957-0233/26/12/125014

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron – hole scattering2015

    • Author(s)
      Masashi Kato, Yuto Mori, and Masaya Ichimura
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DP14-04DP14

    • DOI

      10.7567/jjap.54.04dp14

    • NAID

      210000145101

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Surface recombination velocities for n-type 4H-SiC treated by various processes2014

    • Author(s)
      Yuto Mori, Masashi Kato, Masaya Ichimura
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 47 Issue: 33 Pages: 335102-335102

    • DOI

      10.1088/0022-3727/47/33/335102

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes2014

    • Author(s)
      Yuto Mori, Masashi Kato, Masaya Ichimura
    • Journal Title

      Materials Science Forum

      Volume: 778-780 Pages: 432-435

    • DOI

      10.4028/www.scientific.net/msf.778-780.432

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC2014

    • Author(s)
      Masashi Kato, Yuto Mori, Masaya Ichimura
    • Journal Title

      Materials Science Forum

      Volume: 778-780 Pages: 293-296

    • DOI

      10.4028/www.scientific.net/msf.778-780.293

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate2013

    • Author(s)
      Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Hiroyuki Nagasawa
    • Journal Title

      Physica Status Solidi A

      Volume: 210 Issue: 9 Pages: 1719-1725

    • DOI

      10.1002/pssa.201329015

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Presentation] 4H-SiCにおける表面再結合速度の解析精度向上2016

    • Author(s)
      小濱 公洋、加藤 正史、市村 正也
    • Organizer
      2016年 第63回応用物理学会春季学術講演会
    • Place of Presentation
      東工大 大岡山キャンパス
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] 水溶液と接触した4H-SiCにおける表面再結合2016

    • Author(s)
      市川 義人、加藤 正史、市村 正也
    • Organizer
      2016年 第63回応用物理学会春季学術講演会
    • Place of Presentation
      東工大 大岡山キャンパス
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] n型4H-SiC表面再結合速度の温度依存性の解析2015

    • Author(s)
      小濱公洋、森 裕人、加藤 正史、市村 正也
    • Organizer
      先進パワー半導体分科会 第2回講演会
    • Place of Presentation
      大阪国際交流センター
    • Year and Date
      2015-11-09
    • Related Report
      2015 Annual Research Report
  • [Presentation] Surface recombination velocities for polished p‐type 4H‐SiC2015

    • Author(s)
      Masashi Kato, Kimihiro Kohama, Hiroto Shibata, Masaya Ichimura, Tsunenobu Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2015
    • Place of Presentation
      Giardini Naxos, Italy
    • Year and Date
      2015-10-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Temperature Dependence of Surface Recombination Velocities for n-type 4H-SiC2015

    • Author(s)
      K. Kohama, Y. Mori, M.Kato, M. Ichimura
    • Organizer
      2015 International Conference on Solid State Devices and Materials (SSDM2015)
    • Place of Presentation
      Sapporo Convention Center
    • Year and Date
      2015-09-27
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 4H-SiC表面再結合速度の温度依存性の定量的評価2015

    • Author(s)
      小濱公洋、森 祐人、加藤正史、市村正也
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Place of Presentation
      豊橋技術科学大学 VBL棟
    • Year and Date
      2015-05-28
    • Related Report
      2015 Annual Research Report
  • [Presentation] 4H-SiC 表面再結合速度における温度依存性の解析2015

    • Author(s)
      小濱 公洋,森 祐人,加藤 正史,市村 正也
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Research-status Report
  • [Presentation] n 型 4H-SiC における表面再結合速度の温度依存性に対する評価2014

    • Author(s)
      小濱 公洋,森 祐人,加藤 正史,市村 正也
    • Organizer
      先進パワー半導体分科会 第 1 回講演会
    • Place of Presentation
      ウインクあいち
    • Year and Date
      2014-11-19 – 2014-11-20
    • Related Report
      2014 Research-status Report
  • [Presentation] Deep levels in electron irradiated semi-insulating 4H-SiC: electronic, optical and structural observation2014

    • Author(s)
      Hiroki NAKANE, Masashi KATO, Masaya ICHIMURA, Takeshi OHSHIMA, Ivan IVANOV, Xuan TRINH, Nguyen SON, Erik JANZÉN
    • Organizer
      European Conference on Silicon Carbide and Related Materials 2014
    • Place of Presentation
      Grenoble
    • Year and Date
      2014-09-21 – 2014-09-25
    • Related Report
      2014 Research-status Report
  • [Presentation] Temperature dependence of surface recombination velocities for n-type 4H-SiC2014

    • Author(s)
      Masashi KATO, Kimihiro KOHAMA, Yuto MORI, Masaya ICHIMURA
    • Organizer
      European Conference on Silicon Carbide and Related Materials 2014
    • Place of Presentation
      Grenoble
    • Year and Date
      2014-09-21 – 2014-09-25
    • Related Report
      2014 Research-status Report
  • [Presentation] Microwave reflectivity from 4H-SiC in the high injection condition: Impacts of the electron-hole scattering2014

    • Author(s)
      Masashi Kato, Yuto Mori, Masaya Ichimura
    • Organizer
      International Conference on Solid State Devices and Materials 2014
    • Place of Presentation
      Tsukuba International Congress Center
    • Year and Date
      2014-09-08 – 2014-09-11
    • Related Report
      2014 Research-status Report
  • [Presentation] Time-Resolved Observation of Free Carrier Absorption for Carrier Lifetime Measurement of SiC2014

    • Author(s)
      Masashi Kato, Yuto Mori, Nguyen Xuan Truyen, Masaya Ichimura
    • Organizer
      IUMRS-ICA 2014
    • Place of Presentation
      Fukuoka University
    • Year and Date
      2014-08-24 – 2014-08-30
    • Related Report
      2014 Research-status Report
  • [Presentation] 高水準注入状態のSiCからの反射マイクロ波信号 ~ キャリアライフタイムの正確な評価に向けて ~2014

    • Author(s)
      加藤正史、森祐人、市村正也
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Place of Presentation
      名古屋大学 VBL
    • Year and Date
      2014-05-28 – 2014-05-29
    • Related Report
      2014 Research-status Report
  • [Presentation] Silicon Carbide: Not Only for Energy Savings but Also for Energy Generation2014

    • Author(s)
      Masashi Kato
    • Organizer
      EVTeC & APE Japan 2014
    • Place of Presentation
      Pacifico Yokohama
    • Year and Date
      2014-05-22 – 2014-05-24
    • Related Report
      2014 Research-status Report
  • [Presentation] Understanding of Structures of the Deep Levels in 4H-SiC: Toward Development of Bipolar SiC Devices for Motor Drives2014

    • Author(s)
      Hiroki Nakane, Masashi Kato, Masaya Ichimura
    • Organizer
      EVTeC & APE Japan 2014
    • Place of Presentation
      Pacifico Yokohama
    • Year and Date
      2014-05-22 – 2014-05-24
    • Related Report
      2014 Research-status Report
  • [Presentation] 4H-SiCにおける表面再結合速度の温度依存性の評価2014

    • Author(s)
      小濱公洋,森佑人,加藤正史,市村正也
    • Organizer
      2014年第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Research-status Report
  • [Presentation] 様々な加工処理を施した4H-SiC表面のキャリアライフタイム評価2013

    • Author(s)
      森 祐人、加藤正史、市村正也
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Place of Presentation
      静岡大学創造科学技術大学院
    • Related Report
      2013 Research-status Report
  • [Presentation] FCA測定装置の開発とSiCのキャリアライフタイム評価への適用2013

    • Author(s)
      森祐人,チュングェン加藤正史,市村正也
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス
    • Related Report
      2013 Research-status Report
  • [Presentation] Estimation of Surface Recombination Velocities for n-type 4H-SiC Surfaces Treated by Various Processes2013

    • Author(s)
      Yuto Mori, Masashi Kato, Masaya Ichimura
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2013
    • Place of Presentation
      宮崎シーガイアフェニックス
    • Related Report
      2013 Research-status Report
  • [Presentation] Correlation between Microwave Reflectivity and Exxcess Carrier Concentrations in 4H-SiC2013

    • Author(s)
      Masashi Kato, Yuto Mori, Masaya Ichimura
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2013
    • Place of Presentation
      宮崎シーガイアフェニックス
    • Related Report
      2013 Research-status Report
  • [Presentation] 自由キャリア吸収を用いたキャリアライフタイム測定装置の開発とSiCの評価2013

    • Author(s)
      森祐人、 グェンスァンチュン、 加藤正史、 市村正也
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Related Report
      2013 Research-status Report
  • [Presentation] 高水準注入条件におけるμ-PCD信号:高水準キャリアライフタイム評価への提案2013

    • Author(s)
      加藤 正史、森 祐人、市村 正也
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Related Report
      2013 Research-status Report
  • [Presentation] 高耐圧バイポーラSiCデバイス開発のためのp型SiCエピ層の評価2013

    • Author(s)
      加藤正史
    • Organizer
      自動車技術会2013年春季大会
    • Place of Presentation
      パシフィコ横浜
    • Related Report
      2013 Research-status Report
  • [Patent(Industrial Property Rights)] 半導体キャリアライフタイム測定方法2013

    • Inventor(s)
      加藤正史、森祐人
    • Industrial Property Rights Holder
      加藤正史、森祐人
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-165683
    • Filing Date
      2013-08-09
    • Related Report
      2013 Research-status Report

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Published: 2014-07-25   Modified: 2019-07-29  

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