Quantitative photoelastic imaging of residual strain in bulk substrates of semiconductor crystals
Project/Area Number |
25390068
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | Kyoto Institute of Technology |
Principal Investigator |
FUKUZAWA MASAYUKI 京都工芸繊維大学, 情報工学・人間科学系, 准教授 (60293990)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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Keywords | 結晶評価 / 残留歪み / 光弾性法 |
Outline of Final Research Achievements |
A self-calibration imaging polariscope (SCIP) and an infrared imaging polariscope with sample translation mechanism (IRIP+) have been developed to achieve quantitative photo-elastic imaging of hexagonal crystals such as GaN and SiC and large crystal of casting silicon. The SCIP enabled us to detect strain-induced birefringence in hexagonal crystal by reducing the effect of its natural birefringence, which results in residual strain imaging of SiC commercial wafers. The IRIP+ also enabled us to characterize a whole-lateral slice of large ingot of casting silicon in commercial grade by avoiding strain relaxation with ingot splitting into multiple blocks.
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Report
(4 results)
Research Products
(11 results)
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[Journal Article] 10 cm diameter mono cast Si growth and its characterization2013
Author(s)
Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, and K. Kakimoto
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Journal Title
Solid State Phenomena
Volume: 205-206
Pages: 89-93
DOI
Related Report
Peer Reviewed
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[Presentation] 10 cm diameter mono cast Si growth and its characterization
Author(s)
Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, J.Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao and K. Kakimoto
Organizer
Gettering and Defect Engineering in Semiconductor Technology (GADEST) 2013
Place of Presentation
Oxford, UK
Related Report
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[Presentation] K. Jiptner, Y. Miyamura, H. Harada, T. Sekiguchi, M. Fukuzawa, and K. Kakimoto
Author(s)
K. Jiptner, Y. Miyamura, H. Harada, T. Sekiguchi, M. Fukuzawa, and K. Kakimoto
Organizer
28th Europian PV Solar Engergy Conference and Exhibition (EU-PVSEC 2013)
Place of Presentation
Paris, France
Related Report
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[Presentation] 多結晶シリコンにおける粒界性格と歪みの関係
Author(s)
陳君, 福澤 理行, Ronir Prakash, 李建永, Karolin Jiptner, 宮村佳児, 原田博文, 関口隆史
Organizer
2014年第61回応用物理学会春季学術講演会
Place of Presentation
青山学院大学相模原キャンパス(神奈川県相模原市)
Related Report