Quantitative photoelastic imaging of residual strain in bulk substrates of semiconductor crystals

• Project/Area Number: 25390068
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Kyoto Institute of Technology
• Principal Investigator: FUKUZAWA MASAYUKI 京都工芸繊維大学, 情報工学・人間科学系, 准教授 (60293990)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 結晶評価 / 残留歪み / 光弾性法

Outline of Final Research Achievements

A self-calibration imaging polariscope (SCIP) and an infrared imaging polariscope with sample translation mechanism (IRIP+) have been developed to achieve quantitative photo-elastic imaging of hexagonal crystals such as GaN and SiC and large crystal of casting silicon. The SCIP enabled us to detect strain-induced birefringence in hexagonal crystal by reducing the effect of its natural birefringence, which results in residual strain imaging of SiC commercial wafers. The IRIP+ also enabled us to characterize a whole-lateral slice of large ingot of casting silicon in commercial grade by avoiding strain relaxation with ingot splitting into multiple blocks.

Research Products

• [Journal Article] Thermal stress induced dislocation distribution in directional solidification of Si for PV application (2014)
  • Author(s): K. Jiptner, B. Gao, H. Harada, Y. Miyamura, M. Fukuzawa, K. Kakimoto, T. Sekiguchi
  • Journal Title: Journal of Crystal Growth Volume: 408 Pages: 19-24
  • DOI: 10.1016/j.jcrysgro.2014.09.017
  • Peer Reviewed
• [Journal Article] Characterization of residual strain in Si ingots grown by the seed-cast method (2013)
  • Author(s): K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto, and T. Sekiguchi
  • Journal Title: Solid State Phenomena Volume: 205-206 Pages: 94-99
  • DOI: 10.4028/www.scientific.net/ssp.205-206.94
  • Peer Reviewed
• [Journal Article] 10 cm diameter mono cast Si growth and its characterization (2013)
  • Author(s): Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, and K. Kakimoto
  • Journal Title: Solid State Phenomena Volume: 205-206 Pages: 89-93
  • DOI: 10.4028/www.scientific.net/ssp.205-206.89
  • Peer Reviewed
• [Presentation] 大型多結晶Siの残留歪みイメージング (2016)
  • Author(s): 75.下村 祥生、山田 基晴、福澤 理行
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学 大岡山キャンパス
  • Year and Date: 2016-03-20
• [Presentation] High-sensitivity Infrared Imaging Polariscope for Prompt Characterization of Residual Strain in Large Cast-grown Silicon (2014)
  • Author(s): K. Fuchuya, M. Yamada and M. Fukuzawa
  • Organizer: 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2014-11-23 – 2014-11-27
• [Presentation] Residual Strain and Dislocations in Directional Solidified Si Ingots Analyzed Using FZ Single Crystals (2014)
  • Author(s): K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, B. Gao, K. Kakimoto, M. Fukuzawa
  • Organizer: 29th Europian PV Solar Engergy Conference and Exhibition (EU-PVSEC 2014)
  • Place of Presentation: Amsterdam, The Netherlands
  • Year and Date: 2014-09-24
• [Presentation] Characterization of Strain in Multicrystalline Silicon: Correlation between Grain Boundary Character and Strain (2014)
  • Author(s): J. Chen, M. Fukuzawa, H. Gao, T. Sekiguchi, D. Yang
  • Organizer: 12th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS12)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2014-06-25
• [Presentation] Characterization of residual strain in Si ingots grown by the seed-cast method
  • Author(s): K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto and T. Sekiguchi
  • Organizer: Gettering and Defect Engineering in Semiconductor Technology (GADEST) 2013
  • Place of Presentation: Oxford, UK
• [Presentation] 10 cm diameter mono cast Si growth and its characterization
  • Author(s): Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, J.Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao and K. Kakimoto
  • Organizer: Gettering and Defect Engineering in Semiconductor Technology (GADEST) 2013
  • Place of Presentation: Oxford, UK
• [Presentation] K. Jiptner, Y. Miyamura, H. Harada, T. Sekiguchi, M. Fukuzawa, and K. Kakimoto
  • Author(s): K. Jiptner, Y. Miyamura, H. Harada, T. Sekiguchi, M. Fukuzawa, and K. Kakimoto
  • Organizer: 28th Europian PV Solar Engergy Conference and Exhibition (EU-PVSEC 2013)
  • Place of Presentation: Paris, France
• [Presentation] 多結晶シリコンにおける粒界性格と歪みの関係
  • Author(s): 陳君, 福澤 理行, Ronir Prakash, 李建永, Karolin Jiptner, 宮村佳児, 原田博文, 関口隆史
  • Organizer: 2014年第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス(神奈川県相模原市)