Fundamental studies on carrier recombination process at the surface and interface to improve nitride-based optoelectronic device performance
| Project/Area Number |
25390071
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Kogakuin University (2015)
Tokyo National College of Technology (2013-2014) |
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Principal Investigator |
Onuma Takeyoshi 工学院大学, 公私立大学の部局等, 准教授 (10375420)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 窒化物半導体 / 酸化ガリウム / 酸化インジウムガリウム / ヘテロ構造 / 表面酸化膜 / 界面 / 時間分解フォトルミネセンス / 表面プラズモン / 窒化ガリウムインジウム / 半導体光物性 / 偏光依存性 / 窒化ガリウム / ショットキー / カソードルミネセンス / 半導体物性 / 結晶工学 |
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| Outline of Final Research Achievements |
Carrier recombination process at the surface or interface is a crucial issue when the nitride-based optoelectronic devices are put into practical use, e.g., controlling the condition of the AlGaN surface states in the AlGaN/GaN heterostructure field-effect transistors. AlOx/AlN/GaN structures were prepared by the RF-MBE. Simultaneous changes in the emission energies and lifetimes were observed for the 2DEG related emission by changing in a crystallinity of the AlOx layer. The results demonstrate a possibility to control the surface states by changing in the surface oxide structure. Fundamental optical properties of Ga2O3 substrates were investigated for further improvements in the Ga2O3-based devices. Electrical and optical properties of ZnO films dispersed with Ag nanocrystals and their application in the GaInN-based blue LEDs were studied through the observations of surface plasmon resonant emission and analytical simulations.
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Report
(4 results)
Research Products
(51 results)
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[Presentation] Study on spontaneous emission in nitride-based LEDs with Ag-nanocrystallites ZnO films fabricated by molecular precursor method2015
Author(s)
T.Onuma, T.Shibukawa, D.Taka, K.Serizawa, E.Adachi, H.Nagai, T.Yamaguchi, J.-S.Jang, M.Sato, and T.Honda
Organizer
22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
Place of Presentation
University of Namibia, Namibia
Year and Date
2015-08-14
Related Report
Int'l Joint Research / Invited
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