| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Outline of Final Research Achievements |
Carrier recombination process at the surface or interface is a crucial issue when the nitride-based optoelectronic devices are put into practical use, e.g., controlling the condition of the AlGaN surface states in the AlGaN/GaN heterostructure field-effect transistors. AlOx/AlN/GaN structures were prepared by the RF-MBE. Simultaneous changes in the emission energies and lifetimes were observed for the 2DEG related emission by changing in a crystallinity of the AlOx layer. The results demonstrate a possibility to control the surface states by changing in the surface oxide structure. Fundamental optical properties of Ga2O3 substrates were investigated for further improvements in the Ga2O3-based devices. Electrical and optical properties of ZnO films dispersed with Ag nanocrystals and their application in the GaInN-based blue LEDs were studied through the observations of surface plasmon resonant emission and analytical simulations.
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