| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Outline of Final Research Achievements |
In this study, high speed fabrication of large-area microcrystalline silicon films using VHF plasma with an under-expanded supersonic jet is presented. Especially we focused on the gas flow which is the key to realize approximately 1000 times higher deposition rate than conventional one. From the detailed research of the jet flow, it was found that both the gas pressure and distance between the gas nozzle and substrate are important for the high speed deposition. Then, the great amount of clusters can be generated in the gas phase and transport into the film on the substrate, sometimes the positive charged clusters cause ion bombardment. Therefore, we proposed a new electrode system which efficiently remove the clusters and proved the validity for the film quality.
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