| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
In this study, surface treatment of GaN substrate by atmospheric pressure microplasma was carried out, and the treated GaN surface was analyzed to check the effect of atmospheric pressure microplasma on the GaN surface. Atmospheric pressure microplasma is non-thermal plasma and a type of dielectric barrier discharge that has small discharge gap and requires relatively low discharge voltage of only about 1 kV. Due to the structure of microplasma electrodes, the generated electric field was closed between the electrodes; therefore, only various active species and ions which provided by streamers could affect a target surface. GaN surface was treated by AC and negative pulse powered microplasma using as process gases Ar and N2. GaN surface was analyzed by an X-ray Photoelectron Spectroscopy (XPS) and an Atomic Force Microscope (AFM).
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