| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
In this work, the potentialities of excimer UV-light irradiation and rapid thermal annealing to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals in silicon dioxide have been investigated. The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. We also produced luminescent Si nanocrystals by using reactive pulsed laser deposition techniques.
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