| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
We developed a highly sensitive UV photo sensor with AlGaN semiconductor which has been widely used for various types of electronic devices. We fabricated the Schottky diodes with the material and investigated the electrical properties and the photo responsitivity. As the result, we succeeded in developing sensors which shows good performance in UV sensing, and clarified the issues for further improvement in sensitivity. In this study, we have shown that this type of sensor can be applied to a practical detector for high energy physics such as a liquid argon time projection chamber.
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