Theoretical studies on topological aspects of silicene and related materials
Project/Area Number |
25400317
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Condensed matter physics I
|
Research Institution | The University of Tokyo |
Principal Investigator |
Ezawa Motohiko 東京大学, 大学院工学系研究科(工学部), 講師 (10504805)
|
Project Period (FY) |
2013-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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Keywords | トポロジカル原子層物質 / トポロジカル絶縁体 / スキルミオン / スカーミオン / トポロジカル・ソリトン / ワイル半金属 / トポロジカル相転移 / ループ・ノード半金属 / トポロジカル物質 / 砂時計フェルミオン / マルチ・バンド・タッチング・フェルミオン / ノンシンモルフィック対称性 / ディラック半金属 / バレートロニクス / 原子層物質 / トポロジカル散逸構造 / トポロジカル超伝導体 / マヨラナ粒子 / シリセン / Skyrmion / フォスフォレン / 量子スピンホール効果 / スピン軌道相互作用 / スピントロニクス / トポロジカル・エレクトロニクス |
Outline of Final Research Achievements |
I studied electronic properties of topological monolayer materials such as silicene, germanene and stanene. I revealed various topological phase transitions induced by electric field and photo-irradiation, and proposed many topological devices such as a topological field-effect transistor. I determined the band structure of the group-V and the group-III monolayer materials. Especially, I revealed the edge states of phosphorene, which is a monolayer material made of phosphorus. I also calculated the band structure of arsenene, which is a monolayer arsenic and aluminene, which is a monolayer aluminium, by first-principles calculations. Furthermoe, I studied non-equilibrium dynamics of skyrmions, which are topological solitons in magnets.
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Report
(5 results)
Research Products
(89 results)
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[Presentation] Topological Physics in 2D semiconductors2015
Author(s)
Motohiko Ezawa
Organizer
15 th International Conference on Formation of Semiconductor Interfaces (ICFSI-15)
Place of Presentation
International Conference Center Hiroshima, Hiroshima, Hiroshima, Japan
Year and Date
2015-11-17
Related Report
Int'l Joint Research / Invited
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