| Project/Area Number |
25400530
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Plasma science
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| Research Institution | Ibaraki University |
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Principal Investigator |
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| Research Collaborator |
SATO NAOYUKI
UDONO HARUHIKO
AZUMA KINGO
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | マグネシウムシリサイド / 熱電半導体 / 薄膜 / 固相合成 / 熱処理 / スパッタリング / 結晶構造 / 高周波プラズマ / 水素還元 / 希ガス雰囲気中アニール処理 / 近赤外分光透過率 / ラマンスペクトル |
|---|
| Outline of Final Research Achievements |
From view points of the global warming and the effective use of natural resources, there is a growing attention in the thermoelectric energy conversion that yields electricity from wasted heat. Magnesium silicide Mg2Si has been expected as a promising thermoelectric material because it consists of harmless and resource-abundant elements. However, it has a problem that a high-quality Mg2Si thin film is difficult to be synthesized because there are differences in thermodynamic properties between Mg and Si.
By adopting a combination of the sequential sputter deposition of Si and Mg and the sample annealing in inert gas atmosphere, the authors have succeeded in making a high-quality polycrystalline Mg2Si film on a sapphire substrate for the first time. In addition, we obtained a preliminary result that a high-frequency plasma helped to decrease the synthetic temperature from 300℃ to about 250℃.
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