Surface science of the highly doped silicon for the state of the art semiconductor devices in the next generation
| Project/Area Number |
25410015
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Physical chemistry
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | シリコン / 硝酸酸化 / 表面パッシベーション / ハイドープ / キャリアライフタイム / 界面準位密度 / 固定電荷 / 太陽電池 |
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| Outline of Final Research Achievements |
Nitric acid oxidation of the highly P or B doped surface removed the excess doped region, and decreased defect densities, leading to high efficiency Si solar cells at low cost. Improvement of the surface flatness after the doping process will increase the efficiency of Si solar cells. In the case of the application of these highly doped materials to the wiring of the eternal memory instead of the Al wiring, the longer lifetime of the memory is expected by forming the highly-doped region in the subsurface or protecting this region with an SiO2 layer.
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Report
(4 results)
Research Products
(10 results)
