| Project/Area Number |
25420070
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
Uneda Michio 金沢工業大学, 工学部, 教授 (00298324)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | サファイア / 研磨・CMP / スラリー流れ場 / 研磨能率 / 研磨条件 / 電界印加 / 研磨レート / CMP |
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| Outline of Final Research Achievements |
The sapphire wafer used as the LED substrate, and this substrate is required a high flatness. Chemical mechanical polishing (CMP) is used for fabricating flatness. This research project investigates the analysis of CMP mechanism by using the visualization of the contact interface when the suede type polishing pad was used in CMP. In particular, the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, has effect on the removal rate and contact interface behavior. This research project clarified the relationship between the linear velocity ratio and contact interface behavior from the viewpoints of number of pores which is important property of the suede type polishing pad. Furthermore, this project focuses on the control method of the slurry particles by electrophoresis. As a result, the linear velocity ratio is effective parameter for making the optimized contact interface and stability of removal rate during CMP.
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