Investigation on Switching Mechanism of Resistive RAM using in-situ TEM-STM
| Project/Area Number |
25420279
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
Arita Masashi 北海道大学, 情報科学研究科, 准教授 (20222755)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHASHI Yasuo 北海道大学, 大学院情報科学研究科, 教授 (90374610)
SUEOKA Kazuhisa 北海道大学, 大学院情報科学研究科, 教授 (60250479)
SHIBAYAMA Tamaki 北海道大学, 工学(系)研究科(研究院), 教授 (10241564)
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| Research Collaborator |
KUDO Masaki
OHNO Yuuki
TAKAHASHI Akihito
HIRATA Shuichiro
MURAKAMI Yosuke
OCHI Hayato
YONESAKA Ryota
MUTO Satoshi
NAKANE Akitoshi
HIROI Takahiro
KATSUMURA Reon
MORI Yuji
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 抵抗変化メモリ / 電子顕微鏡 / 電子・電気材料 / 電子デバイス・機器 / ナノ材料 |
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| Outline of Final Research Achievements |
Resistive memory (ReRAM) has been intensively investigated as a non-volatile memory satisfying beyond CMOS technology. Elucidation of its switching mechanism is the most important issue for practical use of ReRAM. While an operation mechanism based on electrochemistry has been proposed, details are obscure. In this work, the in-situ TEM was applied to solve this problem, where real-time observations of the microstructure were performed on metallic-filamant-type ReRAM. It was clarified that the metallic filament shows no remarkable change at the switching moment between high (HRS) to low (LRS) resistance states (Set and Reset). Switching occurs locally in nanometer scale. Remarkable change of the filament occurs with additional current flow. Large change of the filament induceas instability of the switching position and dissolution of metallic ions into the switching layer, and it generates device degradation. The power balance at Set and Reset is important for stable ReRAM operation.
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Report
(4 results)
Research Products
(102 results)
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[Journal Article] Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio2014
Author(s)
G.-f. Li, Y. Honda, H.-x. Liu, K.-i. Matsuda, M. Arita, T. Uemura, M. Yamamoto, Y. Miura, M. Shirai, T. Saito, F. Shi and P. M. Voyles
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Journal Title
Phys. Rev. B
Volume: 89
Issue: 1
Pages: 14428-14428
DOI
Related Report
Peer Reviewed
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[Presentation] Analog memory operation of resistance change memory with MOSFET for brain-like LSIs2015
Author(s)
H. Ando, K. Tomizaki, T. Tohara, T. Morie, T. Hiroi, A. Nakane, R. Katsumura, A. Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
Organizer
Twelfth Internat. Conf. on Flow Dynamics (ICFD 2015)
Place of Presentation
Sendai Internat. Cent., Sendai
Year and Date
2015-10-28
Related Report
Int'l Joint Research
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[Presentation] Switching chracteristics of Cu-MoOx ReRAM2014
Author(s)
T. Hiroi, A. Nakane, T. Fujimoto, M. Arita, H. Ando, T. Morie, Y. Takahashi
Organizer
6th IEEE Internat. Nanoelectronics Conference 2014
Place of Presentation
Hokkaido University (Sapporo, Japan)
Year and Date
2014-07-30
Related Report
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