| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Outline of Final Research Achievements |
The objective of this project is to fabricate a planer pn diode by UV oxidation of metallic thin films. Because most oxide semiconductors exhibit either n or p-type conductivity, an attempt was made to make a pn diode consisting of n-ZnO and p-NiO. The electron concentration and mobility of ZnO were obtained by the Hall measurement, 1E16 cm-3 and 2 cm2V-1s-1, respectively. In contrast to ZnO, the NiO film exhibits a high resistivity and the Hall measurement cannot determine its conductivity. Nevertheless, A diode-like I-V characteristic was obtained in the device made by UV oxidation of a thin metallic Ni/Zn double layer.
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