Layer-number selective process for graphene using maskless ultra-violet laser irradiation
| Project/Area Number |
25420287
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
Wakaya Fujio 大阪大学, 基礎工学研究科, 准教授 (60240454)
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| Co-Investigator(Kenkyū-buntansha) |
ABO Satoshi 大阪大学, 大学院基礎工学研究科, 助教 (60379310)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | グラフェン / レーザー加工 / マスクレス加工 / マスクレス |
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| Outline of Final Research Achievements |
It is found that graphenes on SiO2/Si substrate disappear after KrF excimer laser irradiation with a wavelength of 258 nm at a certain power, which refers to the ‘threshold power’ in the following. The threshold power is found to depend on the layer number, or thickness, of graphene. This means that “layer-number-selective process” is possible. Actually, such a layer-number-selective process is demonstrated. Using SiO2/Si substrate all surface of which is covered by graphene, maskless laser patterning is successfully demonstrated.
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Report
(4 results)
Research Products
(16 results)
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[Presentation] Maskless laser processing of graphene2014
Author(s)
Fujio Wakaya, Tadashi Kurihara, Nariaki Yurugki, Satoshi Abo, Masayuki Abe, and Mikio Takai
Organizer
40th International Conference on Micro and Nano Engineering (MNE2014)
Place of Presentation
Lausanne, Switzerland
Year and Date
2014-09-22 – 2014-09-26
Related Report
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