Layer-number selective process for graphene using maskless ultra-violet laser irradiation

• Project/Area Number: 25420287
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: Wakaya Fujio 大阪大学, 基礎工学研究科, 准教授 (60240454)
• Co-Investigator(Kenkyū-buntansha): ABO Satoshi 大阪大学, 大学院基礎工学研究科, 助教 (60379310)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: グラフェン / レーザー加工 / マスクレス加工 / マスクレス

Outline of Final Research Achievements

It is found that graphenes on SiO2/Si substrate disappear after KrF excimer laser irradiation with a wavelength of 258 nm at a certain power, which refers to the ‘threshold power’ in the following. The threshold power is found to depend on the layer number, or thickness, of graphene. This means that “layer-number-selective process” is possible. Actually, such a layer-number-selective process is demonstrated. Using SiO2/Si substrate all surface of which is covered by graphene, maskless laser patterning is successfully demonstrated.

Research Products

• [Journal Article] X-ray source using carbon-nanotube field emitter with side-gate electrode (2015)
  • Author(s): Shuhei Okawaki, Satoshi Abo, Fujio Wakaya, Masayuki Abe, Mikio Takai
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 6S1 Pages: 06FF10-06FF10
  • DOI: 10.7567/jjap.54.06ff10
  • NAID: 210000145234
  • Peer Reviewed
• [Journal Article] Effect of electron focusing in x-ray source using LiTaO_3 crystals excited by neodymium-doped yttrium lithium fluoride laser light (2014)
  • Author(s): Kosuke Nakahama, Michiaki Takahashi, Satoshi Abo, Fujio Wakaya, and Mikio Takai
  • Journal Title: Journal of Vacuum Science & Technology B Volume: Vol. 32 Issue: 2
  • DOI: 10.1116/1.4864307
  • Peer Reviewed
• [Journal Article] Maskless laser processing of graphene (2014)
  • Author(s): Fujio Wakaya, Tadashi Kurihara, Nariaki Yurugi, Satoshi Abo, Masayuki Abe, Mikio Takai
  • Journal Title: Microelectronic Engineering Volume: 141 Pages: 203-206
  • DOI: 10.1016/j.mee.2015.03.049
  • Peer Reviewed
• [Journal Article] Ultra-violet laser processing of graphene on SiO2/Si (2013)
  • Author(s): Fujio Wakaya, Tadashi Kurihara, Satoshi Abo, Mikio Takai
  • Journal Title: Microelectronic Engineering Volume: 110 Pages: 358-360
  • DOI: 10.1016/j.mee.2013.02.062
  • Peer Reviewed
• [Journal Article] Photoassisted electron emission from metal-oxide-semiconductor cathodes based on nanocrystalline silicon (2013)
  • Author(s): H. Shimawaki, Y. Neo, H. Mimura, F. Wakaya, M. Takai
  • Journal Title: J. App. Phys. Volume: 113 Issue: 15
  • DOI: 10.1063/1.4801887
  • Peer Reviewed
• [Presentation] パルスレーザー堆積/非接触原子間力顕微鏡複合装置の開発とアナターゼ型 TiO2(001)表面の高分解能測定 (2016)
  • Author(s): 勝部大樹，山下隼人，阿保智，若家冨士男，阿部 真之
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大大岡山キャンパス(東京都・目黒区)
  • Year and Date: 2016-03-19
• [Presentation] X-ray Charge Neutralizer Using Carbon-Nanotube Field Emitter (2015)
  • Author(s): Fujio Wakaya
  • Organizer: The 7th Japan-Korea Vacuum Nanoelectronics Sympojium
  • Place of Presentation: Korea University (Korea)
  • Year and Date: 2015-10-23
  • Int'l Joint Research / Invited
• [Presentation] SiO2/Si基板上のグラフェンの紫外レーザによる加工のメカニズム (2015)
  • Author(s): 萬木 成彰，若家 冨士男，阿保 智，山下 隼人, 阿部 真之, 高井 幹夫
  • Organizer: SiO2/Si基板上のグラフェンの紫外レーザによる加工のメカニズム
  • Place of Presentation: 名古屋国際会議場(愛知県・名古屋市)
  • Year and Date: 2015-09-13
• [Presentation] Maskless laser processing of graphene (2014)
  • Author(s): Fujio Wakaya, Tadashi Kurihara, Nariaki Yurugki, Satoshi Abo, Masayuki Abe, and Mikio Takai
  • Organizer: 40th International Conference on Micro and Nano Engineering (MNE2014)
  • Place of Presentation: Lausanne, Switzerland
  • Year and Date: 2014-09-22 – 2014-09-26
• [Presentation] マスクレス加工のためのグラフェンへの紫外レーザ照射（Ⅲ） (2014)
  • Author(s): 萬木成彰，若家冨士男，阿保智，阿部真之，高井幹夫
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 赤外レーザ励起タンタル酸リチウムX線源の特性評価 (2014)
  • Author(s): 上里鷹寛，阿保智，若家冨士男，阿部真之，高井幹夫
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Electron emission from pyroelectric crystal excited using high power infra-red laser light and its x-ray source application (2014)
  • Author(s): Satoshi Abo, Takahiro Uezato, Fujio Wakaya, Mikio Takai
  • Organizer: 27th Inyternational Vacuum Nanoelectronics Conference (IVNC2014)
  • Place of Presentation: Engelberg, Switzerland
  • Year and Date: 2014-07-06 – 2014-07-10
• [Presentation] Graphene layer number selective process by ultra violet laser irradiation (2013)
  • Author(s): Tadashi Kurihara, Fujio Wakaya, Satoshi Abo, Mikio Takai
  • Organizer: 39th International Conference on Micro and Nano Engineering (MNE2013)
  • Place of Presentation: London, UK
• [Presentation] Observation of Graphehe Using Magnetic Force Microscopy (2013)
  • Author(s): K. Maruishi, F. Wakaya, S. Abo, M. Takai
  • Organizer: 26th International Microprocesses and Nanotechnology Conference (MNC2013)
  • Place of Presentation: Sapporo, Japan
• [Presentation] 紫外レーザー照射によるグラフェンの層数選択プロセス (2013)
  • Author(s): 栗原正志，若家冨士男，阿保智，高井幹夫
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学 京田辺キャンパス
• [Presentation] 磁気力顕微鏡によるグラフェンの観察II (2013)
  • Author(s): 丸石宏達, 若家冨士男，阿保智，高井幹夫
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学 京田辺キャンパス