Optical functionality of dense excitonic systems in nitride-based deep-ultraviolet ternary alloy semiconductors

• Project/Area Number: 25420289
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Yamaguchi University
• Principal Investigator: Yamada Yoichi 山口大学, 理工学研究科, 教授 (00251033)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: 励起子分子 / 励起子 / 局在化 / 低次元化 / 窒化物半導体 / 混晶半導体 / 励起子工学 / 量子井戸

Outline of Final Research Achievements

We have studied the fundamental optical properties of biexcitons in AlGaN-based quantum wells that exhibit fundamental absorption edges in the deep-ultraviolet spectral range. We determined the binding energy of biexcitons by means of photoluminescence excitation spectroscopy. We successfully evaluated the effect of quantum confinement, separate from the effect of localization on the binding energy of biexcitons in the ternary alloy quantum wells. We measured several quantum wells with different well layer thicknesses and with different barrier layer alloy compositions. As a result, we clarified that the maximum biexciton binding energy we have evaluated so far was as large as 160 meV. We also clarified that the biexcitons was stable above room temperature up to 750 K.

Research Products

• [Journal Article] Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations (2016)
  • Author(s): Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, and Yoichi Yamada
  • Journal Title: Journal of Applied Physics Volume: 119 Issue: 2 Pages: 25-707
  • DOI: 10.1063/1.4939864
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes (2015)
  • Author(s): N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K. Tadatomo
  • Journal Title: Journal of Applied Physics Volume: 117 Issue: 2
  • DOI: 10.1063/1.4905914
  • Peer Reviewed
• [Journal Article] Binding energy of localized biexcitons in AlGaN-based quantum wells (2014)
  • Author(s): Y.Hayakawa, T.Fukuno, K.Nakamura, H.Miyake, K.Hiramatsu, Y.Yamada
  • Journal Title: APPLIED PHYSICS EXPRESS Volume: 7 Issue: 12 Pages: 122101-122101
  • DOI: 10.7567/apex.7.122101
  • NAID: 210000137325
  • Peer Reviewed
• [Journal Article] Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency (2014)
  • Author(s): S.Kurai, K.Anai, H.Miyake, K.Hiramatsu, Y.Yamada
  • Journal Title: JOURNAL OF APPLIED PHYSICS Volume: 116 Issue: 23 Pages: 235703-235703
  • DOI: 10.1063/1.4904847
  • Peer Reviewed
• [Journal Article] Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration (2013)
  • Author(s): S. Kurai, F. Ushijima, H. Miyake, K. Hiramatsu, Y. Yamada
  • Journal Title: Journal of Applied Physics Volume: 115 Issue: 5 Pages: 53509-53509
  • DOI: 10.1063/1.4864020
  • NAID: 120006364143
  • Peer Reviewed
• [Presentation] AlGaN量子井戸構造における励起子分子の結合エネルギー―混晶障壁層の組成比依存性― (2016)
  • Author(s): 和泉平 福地駿平 中村豪仁 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都目黒区）
  • Year and Date: 2016-03-21
• [Presentation] Binding of quasi-two-dimensional biexcitons in AlGaN quantum wells (2015)
  • Author(s): K. Nakamura, T. Izumi, S. Fukuchi, H. Miyake, K. Hiramatsu, and Y. Yamada
  • Organizer: The 6th International Symposium on Growth of III-Nitrides
  • Place of Presentation: アクトシティ浜松（静岡県浜松市）
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] AlGaN量子井戸における励起子分子結合エネルギーの井戸幅依存性(2) (2015)
  • Author(s): 中村豪仁 和泉平 福地駿平 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-16
• [Presentation] Dense excitonic properties of AlGaN-based quantum wells (2015)
  • Author(s): Y. Yamada, T. Fukuno, K. Nakamura, T. Izumi, H. Miyake, and K. Hiramatsu
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices (2015 German-Japanese-Spanish Joint Workshop)
  • Place of Presentation: 京都大学芝蘭会館（京都市）
  • Year and Date: 2015-07-12
  • Int'l Joint Research / Invited
• [Presentation] AlGaN量子井戸における励起子分子結合エネルギーの井戸幅依存性 (2015)
  • Author(s): 福野智規 中村豪仁 和泉平 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学（神奈川県平塚市）
  • Year and Date: 2015-03-11
• [Presentation] 混晶局在系における励起子多体効果 (2014)
  • Author(s): 山田陽一
  • Organizer: 第75回応用物理学会秋季学術講演会「窒化物半導体特異構造の科学～物性評価と結晶学の構築へ～」シンポジウム
  • Place of Presentation: 北海道大学（北海道札幌市）
  • Year and Date: 2014-09-19
  • Invited
• [Presentation] AlGaN混晶薄膜の高温PLE測定 (2014)
  • Author(s): 中尾文哉 長坂智幸 鶴丸拓斗 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学（北海道札幌市）
  • Year and Date: 2014-09-19
• [Presentation] AlGaN系量子井戸構造の高温PLE測定 (2014)
  • Author(s): 福野智規 中村豪仁 和泉平 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学（北海道札幌市）
  • Year and Date: 2014-09-19
• [Presentation] Si濃度の異なるAl0.61Ga0.39N混晶薄膜のカソードルミネッセンス法による局所スペクトル評価 (2014)
  • Author(s): 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学（北海道札幌市）
  • Year and Date: 2014-09-19
• [Presentation] Photoluminescence due to inelastic scattering of excitons and biexcitons in AlGaN-based quantum wells up to 750 K (2014)
  • Author(s): Y. Hayakawa, T. Fukuno, K. Nakamura, H. Miyake, K. Hiramatsu, and Y. Yamada
  • Organizer: International Workshop on Nitride Semiconductors 2014
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-26
• [Presentation] Inelastic exciton and biexciton scattering in AlGaN-based quantum wells (2014)
  • Author(s): Y. Yamada, Y. Hayakawa, T. Fukuno, K. Nakamura, H. Miyake, and K. Hiramatsu
  • Organizer: 32nd International Conference on the Physics of Semiconductors
  • Place of Presentation: Austin, USA
  • Year and Date: 2014-08-14
• [Presentation] Effect of quantum confinement on biexciton binding energy in AlGaN-based quantum wells
  • Author(s): Y. Hayakawa, T. Fukuno, H. Miyake, K. Hiramatsu, and Y. Yamada
  • Organizer: 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Gayload National Hotel and Convention Center, Washington, DC, USA
• [Presentation] AlGaN混晶局在系の励起子光物性
  • Author(s): 山田陽一
  • Organizer: 日本学術振興会結晶加工と評価技術第145委員会第137回研究会
  • Place of Presentation: 明治大学（東京都千代田区）
  • Invited
• [Presentation] AlGaN系量子井戸構造における局在励起子分子の結合エネルギー
  • Author(s): 早川裕也 福野智視 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] AlGaN混晶薄膜における励起子分子の熱的安定性
  • Author(s): 古谷佑二郎 中尾文哉 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] LP-MOVPE法で成長したSi添加AlxGa1-xN/AlyGa1-yN多重量子井戸構造(x~0.6)のカソードルミネッセンスマッピング評価
  • Author(s): 倉井聡 穴井恒二 若松歩 三宅秀人 平松和政 山田陽一
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] AlGaN系量子井戸構造の高温PL測定
  • Author(s): 早川裕也 福野智視 中村豪仁 倉井聡 三宅秀人 平松和政 山田陽一
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学（相模原市）
• [Presentation] Al組成の異なるAlGaN薄膜のカソードルミネッセンス法による局所スペクトル評価
  • Author(s): 倉井聡 合田直樹 三宅秀人 平松和政 山田陽一
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学（相模原市）