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Formation of insulators for the power devices inserting interface control layer by high-density radical method

Research Project

Project/Area Number 25420290
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionKyushu Institute of Technology

Principal Investigator

IZUMI AKIRA  九州工業大学, 大学院工学研究院, 教授 (30223043)

Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords表面改質 / 表面窒化 / 熱処理 / 絶縁物 / 界面準位
Outline of Final Research Achievements

In this work, we carried out the basic study on the introduction of the interface control layer and post-heat treatment condition in order to realize a high-quality insulating film / SiC structure. We investigated in the Si (100) substrate without using the SiC substrate in this study. The interface control layer formation was carried out by catalytic decomposition of NH3 gas by heating the filament. The optimal condition was revealed as follows; filament temperature: 1600 ° C., the substrate temperature: 200 ° C, treatment time: 30 min. In addition, we examine the optimal conditions of the post-heat treatment in a nitrogen atmosphere. It was found that it is possible to reduce the interface state density by the treatment for 60 minutes at 400 ℃.

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • 2013 Research-status Report
  • Research Products

    (8 results)

All 2015 2014 Other

All Presentation (8 results)

  • [Presentation] 窒化層を導入したSiCN/Si(100)の絶縁特性2015

    • Author(s)
      林田祥吾、和泉亮
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      琉球大学工学部
    • Year and Date
      2015-12-05
    • Related Report
      2015 Annual Research Report
  • [Presentation] Si基板上に堆積したSiCN膜の機械的特性調査および熱処理効果の検討2015

    • Author(s)
      山本賢宏、山田知宏、門谷豊、和泉亮
    • Organizer
      第12回Cat-CVD研究会
    • Place of Presentation
      名古屋大学大学院工学研究科
    • Year and Date
      2015-07-03
    • Related Report
      2015 Annual Research Report
  • [Presentation] HWCVD法により堆積したSiCN/SI(100)の熱処理による電気的特性の向上2015

    • Author(s)
      林田祥吾、井上洋平、和泉亮
    • Organizer
      九州表面・真空研究会2015
    • Place of Presentation
      九州工業大学工学部
    • Year and Date
      2015-06-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] HWCVD法により成膜したSiCN膜の剥離強度特性~熱処理効果の検討~2014

    • Author(s)
      伊勢田徹平、中上昌俊、山本賢宏、山田知広、門谷豊、和泉亮
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学
    • Year and Date
      2014-12-06 – 2014-12-07
    • Related Report
      2014 Research-status Report
  • [Presentation] Adhesion properties of SiCN films deposited by hot-wire chemical deposition2014

    • Author(s)
      Teppei Iseda, Masatoshi Nakagami, Tomohiro Yamada, Yutaka Kadotani, Akira Izumi
    • Organizer
      HWCVD 8 Conference
    • Place of Presentation
      Braunschweig (Germany)
    • Year and Date
      2014-10-13 – 2014-10-16
    • Related Report
      2014 Research-status Report
  • [Presentation] Evaluation of friction coefficient of silicon carbon nitride films deposited by HWCVD2014

    • Author(s)
      Tomohiro Yamada, Masatoshi Nakagami, Yutaka Kadotani, Akira Izumi
    • Organizer
      The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
    • Place of Presentation
      Fukuoka
    • Year and Date
      2014-08-24 – 2014-08-30
    • Related Report
      2014 Research-status Report
  • [Presentation] 窒化層導入したSiCN/Si(100)の電気的特性評価2014

    • Author(s)
      井上洋平、森田慎弥、和泉亮
    • Organizer
      第11回Cat-CVD研究会
    • Place of Presentation
      東北大学
    • Year and Date
      2014-07-11 – 2014-07-12
    • Related Report
      2014 Research-status Report
  • [Presentation] HW 法により堆積したSiCN 膜の電気的特性

    • Author(s)
      森田慎弥、井上洋平、和泉 亮
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎大学工学部
    • Related Report
      2013 Research-status Report

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Published: 2014-07-25   Modified: 2019-07-29  

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