| Project/Area Number |
25420291
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saga University |
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Principal Investigator |
Nishio Mitsuhiro 佐賀大学, 工学(系)研究科(研究院), 教授 (60109220)
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| Co-Investigator(Kenkyū-buntansha) |
TANAKA Tooru 佐賀大学, 工学系研究科, 教授 (20325591)
SAITO Katsuhiko 佐賀大学, シンクロトロン応用研究センター, 助教 (40380795)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 4元ZnTe系材料 / 格子整合 / 純緑色LED / 結晶評価 / p型ド－ピング / アンド－プ / ZnMgTeSe 4元混晶 / ヘテロ接合 / 純緑色ＬＥＤ / 燐ド－ピング / 高キャリア密度 / Zn1-xMgxTe1-ySey 4元混晶 / 組成制御 / 有機金属気相成長 |
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| Outline of Final Research Achievements |
The results on metalorganic vapor phase epitaxial growth of ZnMgSeTe layers were summarized briefly. The effects of several growth conditions such as substrate temperature, reactor pressure and transport rates of metalorganic sources and tris-dimethylaminophosphorus dopant upon the fractions of Mg and Se, Raman property, the surface morphology and surface roughness have been clarified. ZnMgSeTe layer with relatively high Mg and Se fractions is obtainable at a low substrate temperature. It has been shown by varying source transport rate that ZnMgSeTe layer nearly-lattice-matched to ZnTe substrate shows good crystal quality, independent of reactor pressure. Even as-grown phosphorus doped ZnMgSeTe layers nearly lattice-matched to ZnTe show p-type conduction. The carrier concentration of the layer is enhanced by annealing treatment. A maximum carrier concentration of 2.5×1018 cm-3 is obtained.
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