Visible and ultraviolet light emitting MOS device with rare earth oxide layer
| Project/Area Number |
25420293
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyama Prefectural University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
IWATA HIDEYUKI 富山県立大学, 工学部, 准教授 (80223402)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | シリコン / MOS / 発光 / 半導体 / 希土類 |
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| Outline of Final Research Achievements |
A light emitting device based on silicon (Si), which is a major semiconductor material for large scale integrated circuits (LSI), is expected for micro displays and optical interconnections. In this study, Si-based light-emitting devices, of which wavelength was visible and ultraviolet range, were fabricated and measured. The luminescent insulator layers were fabricated from the mixtures of organic liquid sources of rare earth elements, which were spin-coated on the Si substrate and annealed in air. The rare earth elements such as Tb, Eu, Gd, etc. and the combinations of Ca、Ba、Ta were examined. Electroluminescence (EL), whose wavelengths corresponded to radiative transitions of the rare earth ions, were observed. The device with Gd oxide layer showed ultraviolet EL of about 310 nm wavelength.
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Report
(4 results)
Research Products
(6 results)
