Development of high sensitivity semiconductor sub-Nano sensor for charging and dose under radioactive environment
| Project/Area Number |
25420296
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo City University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 帯電計測 / 宇宙環境 / 半導体 / センサ開発 / 放射線 / PEA / PEA法 / 圧力波 |
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| Outline of Final Research Achievements |
For developing of high time resolution of space charge measurement using semiconductor, we measure the depletion layer in the bulk of semiconductor under DC application using super high resolution space charge measurement system using PEA (pulsed electroacoustic) method which has 2 um positional resolution as the best PEA system in the world. We prepare p-type, n-type and pn type semiconductor as a sample. As the results, we obtained and confirmed the formation of depletion layer in the each bulk of samples. The formation of depletion layer was different at each samples with the each voltage application. It is considered that the work function differential was exist between semiconductor and electrode materials. Due to the differential of work function, the junction formation is decided either Ohmic or schottky junction. From the results, we obtained the fabrication index for the sensor of PEA system.
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Report
(4 results)
Research Products
(9 results)
