| Project/Area Number |
25420299
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology (2014-2015)
Waseda University (2013) |
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Principal Investigator |
Nishinaga Jiro 国立研究開発法人産業技術総合研究所, 太陽光発電研究センター, 研究員 (90454058)
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| Co-Investigator(Renkei-kenkyūsha) |
HORIKOSHI Yoshiji 早稲田大学, 理工学術院, 教授 (60287985)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 有機・無機半導体ヘテロ界面 / フラーレン / GaAs / MBE / HEMT / 光スイッチ / 量子ドット / 太陽電池 / 深い準位 |
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| Outline of Final Research Achievements |
C60 uniformly doped GaAs and C60 doped AlGaAs / GaAs layers are grown on GaAs substrates by a migration enhanced epitaxy method. In high resolution transmission electron microscopy images, no dislocation is confirmed in the C60 doped GaAs layers. The electrical properties of C60 doped GaAs p-i-n diodes are measured by capacitance-voltage methods, and the depletion layers are found to be formed between C60 doped GaAs and Si doped GaAs layers. This result suggests that the electron traps induced by C60 incorporation can capture electrons and act as negative space-charge (acceptor ions). For C60 doped AlGaAs / GaAs structures, the two dimensional electron gas is trapped by C60 electron traps even at low temperatures. The trapped electrons can be released by light irradiation, and high-mobility electrons appear at the AlGaAs / GaAs interface only under illumination.
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