| Project/Area Number |
25420300
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Chubu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
IROKAWA Yoshihiro 物質・材料研究機構, ワイドギャップ機能材料グループ, 研究員 (90394832)
SUMIYA Masatomo 物質・材料研究機構, ワイドギャップ機能材料グループ, 研究員 (20293607)
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| Research Collaborator |
KAWAI Hiroji
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | AlGaN/GaNヘテロ構造 / GaNバッファ層 / 炭素 / 欠陥準位 / デバイス・スイッチング特性 / MOCVD結晶成長 / 電流コラプス / デバイス･スイッチング特性 / スイッチング特性 / 有機金属気相成長 / ショットキーダイオード |
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| Outline of Final Research Achievements |
AlGaN/GaN hetero-structures are one of promising materials for the next generation of RF high power devices.At present,however,these GaN-based devices encounter undesirable current collapse issues,where actual device performances at high frequencies can be limited by the presence of deep-level defects in the AlGaN/GaN hetero-structures.In this study,we have systematically investigated a correlation between deep-level defects and carrier-trapping phenomena in AlGaN/GaN hetero-structures from a viewpoint of Carbon incorporation for MOCVD growth.As the result,we have revealed what kinds of Carbon-related deep-level defects are strongly responsible for the swithching characteristics in the bulk region of the AlGaN/GaN hetero-structures.
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