| Project/Area Number |
25420307
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Garcia Villora 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (90421411)
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| Co-Investigator(Kenkyū-buntansha) |
OSHIMA Yuichi 国立研究開発法人 物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (70623528)
SHIMAMURA Kiyoshi 国立研究開発法人 物質・材料研究機構, 光・電子材料ユニット, グループリーダー (90271965)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 酸化物半導体 / ワイドギャップ半導体 / パワー半導体 / パワーデバイス / 酸化ガリウム |
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| Outline of Final Research Achievements |
We investigated the halide vapor phase epitaxy (HVPE) of Ga2O3, a promising wide bandgap semiconductor. It was found that the formation of in-plane rotational domains of β-Ga2O3 can be remarkably suppressed by using off-angled c-plane sapphire substrates, resulting in quasi-heteroepitaxial layers. We also clarified that the polymorph of Ga2O3 is strongly dependent on the substrate at low growth temperature around 550℃. In concrete, corundum-structured α-Ga2O3 is obtained on sapphire (0001), while hexagonal-structured ε-Ga2O3 can be grown on GaN(0001) and AlN(0001).
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