Development of rapid growth technique of beta-Ga2O3 for power device applications by halide vapor phase epitaxy
| Project/Area Number |
25420307
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Garcia Villora 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (90421411)
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| Co-Investigator(Kenkyū-buntansha) |
OSHIMA Yuichi 国立研究開発法人 物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (70623528)
SHIMAMURA Kiyoshi 国立研究開発法人 物質・材料研究機構, 光・電子材料ユニット, グループリーダー (90271965)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 酸化物半導体 / ワイドギャップ半導体 / パワー半導体 / パワーデバイス / 酸化ガリウム |
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| Outline of Final Research Achievements |
We investigated the halide vapor phase epitaxy (HVPE) of Ga2O3, a promising wide bandgap semiconductor. It was found that the formation of in-plane rotational domains of β-Ga2O3 can be remarkably suppressed by using off-angled c-plane sapphire substrates, resulting in quasi-heteroepitaxial layers. We also clarified that the polymorph of Ga2O3 is strongly dependent on the substrate at low growth temperature around 550℃. In concrete, corundum-structured α-Ga2O3 is obtained on sapphire (0001), while hexagonal-structured ε-Ga2O3 can be grown on GaN(0001) and AlN(0001).
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Report
(4 results)
Research Products
(11 results)
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[Presentation] Halide vapor phase epitaxy of α-Ga2O32015
Author(s)
Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
Organizer
International Workshop on Gallium Oxide and Related Materials 2015
Place of Presentation
京都大学 桂キャンパス
Year and Date
2015-11-05
Related Report
Int'l Joint Research
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[Presentation] Halide Vapor Phase Epitaxy of ε-Ga2O32015
Author(s)
Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
Organizer
International Workshop on Gallium Oxide and Related Materials 2015
Place of Presentation
京都大学 桂キャンパス
Year and Date
2015-11-04
Related Report
Int'l Joint Research
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[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O32015
Author(s)
大島 祐一，ガルシア ビジョラ、島村 清史
Organizer
39th International Conference and Expo on Advanced Ceramics and Composites
Place of Presentation
Hilton Daytona Beach Resort and Ocean Center,Daytona beach Florida,USA
Year and Date
2015-01-27
Related Report
Invited
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