| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Outline of Final Research Achievements |
A practical design method of ultra-high-efficiency microwave power amplifier (DC-to-RF converter) and rectifier (RF-to-DC converter) has been established for recent wireless communication or wireless power transfer systems. First, an optimal impedance (terminal condition) estimation system for the intrinsic part of a transistor was reconstructed to improve accuracy and to apply to high-power devices. Then, a circuit design procedure considering nonlinear parasitic elements in the transistor was contrived to estimate an optimal impedance condition for a load circuit. As verifications, GaAs pHEMT and GaN HEMT microwave power amplifiers and rectifiers were fabricated based on the proposed design method at several operation frequencies, which exhibited high-efficiency performances of from 70 to 80%.
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