Wafer level integration of nitride semiconductor device and Si CMOS integrated circuit for sensor application
| Project/Area Number |
25420330
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
Okada Hiroshi 豊橋技術科学大学, エレクトロニクス先端融合研究所, 准教授 (30324495)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 窒化物半導体 / シリコン集積回路 / 一体化技術 / デバイス作製技術 / 半導体欠陥評価 / LED / トランジスタ / 表面パッシベーション / 異種基板接合 / イオン注入技術 / 欠陥評価 / 窒化物半導体におけるダメージ評価 |
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| Outline of Final Research Achievements |
To realize novel integrated sensors and systems consist of nitride semiconductor-based devices and Si-based integrated circuit, device fabrication processes, such as an wafer bonding technique a low damage insulator film deposition technique, and so on were developed. Effects of process induced damages in nitride semiconductors were also investigated. As a proof of proposed device fabrication technology, a circuit having GaN-based LED driven by Si transistor on the same wafer was fabricated, and its successful operation was achieved for the first time.
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Report
(4 results)
Research Products
(31 results)
