| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
To realize novel integrated sensors and systems consist of nitride semiconductor-based devices and Si-based integrated circuit, device fabrication processes, such as an wafer bonding technique a low damage insulator film deposition technique, and so on were developed. Effects of process induced damages in nitride semiconductors were also investigated. As a proof of proposed device fabrication technology, a circuit having GaN-based LED driven by Si transistor on the same wafer was fabricated, and its successful operation was achieved for the first time.
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