| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
|---|
| Outline of Final Research Achievements |
Radiation-hardened electronics has been required for the decommissioning of the Fukushima-1 plant accident. . 4H-SiC with wide-bandgap energy is one of the candidate for base semiconductor for the radiation-hardened electronics. In this work, 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide contacts were demonstrated in harsh environments of high gamma-ray radiation up to over 100 Mrad and high-temperature up to 450°C. For an integrated logic circuits, pseudo-CMOS and nMOS inverters were also demonstrated.
|
