Fabrication processes of GaN-based integrated surface-emitting devices using a chemical liftoff techniques

• Project/Area Number: 25420341
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kogakuin University
• Principal Investigator: Honda Tohru 工学院大学, 公私立大学の部局等, 教授 (20251671)
• Co-Investigator(Kenkyū-buntansha): YAMAGUCHI Tomohiro 工学院大学, 先進工学部, 准教授 (50454517)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
• Keywords: 窒化ガリウム / 発光ダイオード / 分子線エピタキシャル成長法 / 結晶成長 / リフトオフ / 透明電極 / 酸化物 / X線回折 / GaN / MBE / x線回折

Outline of Final Research Achievements

The target of this project is for fabricating GaN growth on Al templates, which can be separated from the sapphire substrate using chemical liftoff techniques, and near UV transparent conductive films for GaN-based integrated surface emitting devices. The detailed research topics are the followings; (1) the fabrication of GaN layers grown on Al templates, and (2) the realization of GaN-based integrated surface emitting devices with transparent conductive films fabricated by molecular precursor method. In the topic 1, we grew GaN films on pseudo Al substrates by molecular beam epitaxy (MBE) and investigated the growth mechanisms on the pseudo substrates. The surface cracks can be reduced using a low-temperature buffer deposition. In the topic 2, we fabricated GaInOx thin films by molecular precursor method, which is one of the solution techniques using spin coating. These films were also fabricated on a blue LED structure.

Research Products

• [Journal Article] Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in beta-Ga2O3 single crystals (2016)
  • Author(s): T.Onuma, S.Saito, K.Sasaki, K.Goto, T.Masui, T.Yamaguchi, T.Honda, A.Kuramata, and M.Higashiwaki
  • Journal Title: Applied Physics Letters Volume: 108 Issue: 10 Pages: 1019041-5
  • DOI: 10.1063/1.4943175
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal (2015)
  • Author(s): R. Cusco, N. Domenech-Amador, T. Hatakeyama, T. Yamaguchi, T. Honda and L. Artus
  • Journal Title: Journal of Applied Physics Volume: 117 Issue: 18 Pages: 185706-185706
  • DOI: 10.1063/1.4921060
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate (2015)
  • Author(s): M. Sumiya, T. Honda, L. Sang, Y. Nakanon, K. Watanabe and F. Hasegawa
  • Journal Title: Physics Status Solidi (A) Volume: 212 Issue: 5 Pages: 1033-1038
  • DOI: 10.1002/pssa.201431732
  • Peer Reviewed
• [Journal Article] Valence band ordering in beta-Ga2O3 studied by polarized transmittance and reflectance spectroscopy (2015)
  • Author(s): T.Onuma, S.Saito, K.Sasaki, T.Masui, T.Yamaguchi, T.Honda, and M.Higashiwaki
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 11 Pages: 1126011-5
  • DOI: 10.7567/jjap.54.112601
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions (2015)
  • Author(s): H. Nagai, S. Mita, I. Takano, T. Honda and M. Sato
  • Journal Title: Materials Letters Volume: 141 Pages: 235-237
  • DOI: 10.1016/j.matlet.2014.11.056
  • Peer Reviewed
• [Journal Article] Impacts of AlOx formation on emission properties of AlN/GaN heterostructures (2015)
  • Author(s): Takeyoshi Onuma, Yohei Sugiura, Tomohiro Yamaguchi, Tohru Honda, and Masataka Higashiwaki
  • Journal Title: Applied Physics Express Volume: 8 Issue: 5 Pages: 0524011-3
  • DOI: 10.7567/apex.8.052401
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Cathodoluminescence spectra of Ga-In-O Polycrystalline films fabricated by molecular precursor method (2014)
  • Author(s): 尾沼猛儀、山口智広、本田徹他10名
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 5S1 Pages: 05FF02-05FF02
  • DOI: 10.7567/jjap.53.05ff02
  • NAID: 210000143831
  • Peer Reviewed / Open Access
• [Journal Article] Growth of crystallized AlOx on AlN/GaN heterostructures by in-situ RF-MBE (2014)
  • Author(s): Yohei Sugiura, Tohru Honda, Masataka Higashiwaki
  • Journal Title: Journal of Crystal Growth Volume: 405 Pages: 64-67
  • DOI: 10.1016/j.jcrysgro.2014.07.055
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Formation mechanism of p-type Cu2O thin films via intermediate Cu0 species derived from Cu(II) complex of ethylenediamine-N,N,N'N'-tetraacetic acid (2014)
  • Author(s): Hiroki Nagai, Tatsuya Suzuki, Chiro Mochizuki, Ichiro Takano, Tohru Honda, and Mitsunobu Sato
  • Journal Title: Science of Advanced Materials Volume: ６ Issue: 3 Pages: 603-611
  • DOI: 10.1166/sam.2014.1788
  • Peer Reviewed
• [Journal Article] Fabrication of red, green and blue pixels using integrated GaN-based Schottky-type light-emitting diodes (2013)
  • Author(s): T Honda, T. Yamaguchi, N. Sakai, S. Fujioka and Y. Sugiura
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 8S Pages: 08JH12-08JH12
  • DOI: 10.7567/jjap.52.08jh12
  • NAID: 210000142705
  • Peer Reviewed
• [Journal Article] Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation (2013)
  • Author(s): T. Yamaguchi, N. Uematsu, T. Araki, T. Honda, E. Yoon and Y. Nanishi
  • Journal Title: Journal of Crystal Growth Volume: 377 Pages: 123-126
  • Peer Reviewed
• [Journal Article] Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals (2013)
  • Author(s): T. Onuma, T. Yamaguchi and T. Honda
  • Journal Title: Physica Status Solidi C Volume: 10 Pages: 869-872
  • Peer Reviewed
• [Journal Article] Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE (2013)
  • Author(s): T. Yamaguchi, D. Tajimi, M. Hayashi, T. Igaki, Y. Sugiura and T. Honda
  • Journal Title: Physica Status Solidi C Volume: 11 Issue: 11 Pages: 1549-1552
  • DOI: 10.1002/pssc.201300399
  • Peer Reviewed
• [Presentation] (0001)α-Al2O3基板上および(0001)GaNテンプレート上へのIn2O3膜のミストCVD成長 (2016)
  • Author(s): 小林 拓也, 田沼 圭亮, 山口 智広, 尾沼 猛儀, 本田 徹
  • Organizer: 2016年春季応用物理学会
  • Place of Presentation: 東京工業大学, 東京
  • Year and Date: 2016-03-19
• [Presentation] 分子プレカーサー法を用いたIn-Ga-Mg-O薄膜製作検討 (2016)
  • Author(s): 高橋 勇貴, 後藤 良介, 安野 泰平, 尾沼 猛儀, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
  • Organizer: 2016年春季応用物理学会
  • Place of Presentation: 東京工業大学, 東京
  • Year and Date: 2016-03-19
• [Presentation] 分子プレカーサー法で製作した銀分散ZnO薄膜の光学的特性 (2016)
  • Author(s): 高 大地, 尾沼 猛儀, 澁川 貴史, 永井 裕己, 山口 智広, Ja-Soon Jang, 佐藤 光史, 本田 徹
  • Organizer: 2016年春季応用物理学会
  • Place of Presentation: 東京工業大学, 東京
  • Year and Date: 2016-03-19
• [Presentation] β-Ga2O3結晶における励起子-LOフォノン相互作用 (2016)
  • Author(s): 尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 後藤 健, 増井 建和, 山口 智広, 本田 徹, 倉又 朗人, 東脇 正高
  • Organizer: 2016年春季応用物理学会
  • Place of Presentation: 東京工業大学, 東京
  • Year and Date: 2016-03-19
• [Presentation] Technical issues of GaInN growth with high indium composition for LEDs (2016)
  • Author(s): T. Honda, T. Yamaguchi, and T. Onuma
  • Organizer: The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
  • Place of Presentation: Hong Kong
  • Year and Date: 2016-02-14
  • Int'l Joint Research / Invited
• [Presentation] Valence band structure of monoclinic gallium oxide studied by polarized optical measurements (2016)
  • Author(s): T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
  • Organizer: The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
  • Place of Presentation: Hong Kong
  • Year and Date: 2016-02-14
  • Int'l Joint Research / Invited
• [Presentation] Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (2015)
  • Author(s): T. Yamaguchi, T. Honda, T. Onuma, T. Sasaki, M. Takahasi, T. Araki and Y. Nanishi
  • Organizer: 第25回日本MRS年次大会
  • Place of Presentation: 横浜
  • Year and Date: 2015-12-08
  • Invited
• [Presentation] Study of nitridation conditions of Al layer for GaN growth by RF-MBE (2015)
  • Author(s): Y. Hoshikawa, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: Materials Research Society, 2015 Fall Meeting
  • Place of Presentation: Boston, MA, USA
  • Year and Date: 2015-12-01
  • Int'l Joint Research
• [Presentation] Growth temperature dependence of Ga2O3 and In2O3 growth rates in Mist CVD (2015)
  • Author(s): K. Tanuma, T. Yamaguchi, T. Onuma, and T. Honda
  • Organizer: Materials Research Society, 2015 Fall Meeting
  • Place of Presentation: Boston, MA, USA
  • Year and Date: 2015-12-01
  • Int'l Joint Research
• [Presentation] Defect characterization in GaInN on compressive and strain-free GaN underlying layer (2015)
  • Author(s): N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Yamaguchi, T. Honda, Y. Nakano, and M. Sumiya
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Impact of nitridation on GaN growth on (0001)sapphire with an Al layer as a release layer by RF-MBE (2015)
  • Author(s): Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Optical Anisotropy in (010) Plane of beta-Ga2O3 Single Crystals (2015)
  • Author(s): T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
  • Organizer: 1st International Workshop on Gallium Oxide and Related Materials
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2015-11-03
  • Int'l Joint Research
• [Presentation] Growth of alpha-(AlGa)2O3 by mist CVD and evaluation of its thermal stability (2015)
  • Author(s): M. Takahashi, T. Hatakeyama, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: 1st International Workshop on Gallium Oxide and Related Materials
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2015-11-03
  • Int'l Joint Research
• [Presentation] Growth temperature dependence of Ga2O3 growth rate by mist CVD (2015)
  • Author(s): K. Tanuma, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: 1st International Workshop on Gallium Oxide and Related Materials
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2015-11-03
  • Int'l Joint Research
• [Presentation] Fabrication of p-type NiO thin films by molecular precursor method (2015)
  • Author(s): R. Goto, T. Onuma, T. Yamaguchi, H. Nagai, M. Sato, and T. Honda
  • Organizer: 1st International Workshop on Gallium Oxide and Related Materials
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2015-11-03
  • Int'l Joint Research
• [Presentation] Investigation of in-situ X-ray reciprocal space mapping measurements in GaInN growth on GaN by RF-MBE (2015)
  • Author(s): M. Sawada, T. Yamaguchi, T. Sasaki, K. Narutani, R. Deki, T. Onuma, T. Honda, M. Takahashi, and Y. Nanishi
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Impact of nitridation on GaN growth on sapphire with an Al layer as a sacrifice layer by RF-MBE (2015)
  • Author(s): Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] AR-XPS measurement of AlOx/AlN/GaN heterostructures (2015)
  • Author(s): D. Isono, S. Takahashi, Y. Sugiura, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Discussion of ZnO based film by mist CVD method using molecular precursor solution (2015)
  • Author(s): R. Goto, K. Tanuma, T. Hatakeyama, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Correlation between green fluorescent emission and pits formed on surface of GaInN films (2015)
  • Author(s): N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Yamaguchi, T. Honda, Y. Nakano, and M. Sumiya
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Comprehensive study on GaN and InN etching by inductively coupled plasma reactive ion etching (2015)
  • Author(s): K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Fundamental Study on Local Surface Plasmons in Ag-nanocrystallites ZnO films toward Future Applications in Nitride-based LEDs (2015)
  • Author(s): D. Taka, T. Onuma, T. Shibukawa, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Mist-CVD Growth of In2O3 (2015)
  • Author(s): T. Kobayashi, K. Tanuma, T. Yamaguchi, T. Onuma, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] Study on the Phase Transition Temperature of α-(AlGa)2O3 Grown by Mist CVD (2015)
  • Author(s): M. Takahashi, T. Hayakeyama, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: The 14th International Symposium on Advanced Technology (ISAT-14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] プラズモンによる青色LEDの高輝度化に向けた研究 (2015)
  • Author(s): 高大地, 尾沼猛儀、山口智広、本田徹
  • Organizer: 2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: 工学院大学, 東京
  • Year and Date: 2015-11-01
• [Presentation] GaInN系LED製作へ向けた結晶成長とデバイスプロセス (2015)
  • Author(s): 鳴谷建人, 尾沼猛儀、山口智広、本田徹
  • Organizer: 2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: 工学院大学, 東京
  • Year and Date: 2015-11-01
• [Presentation] 情報化社会の快適化に向けたGaN系デバイス製作に関する研究 (2015)
  • Author(s): 磯野大樹, 尾沼猛儀、山口智広、本田徹
  • Organizer: 2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: 工学院大学, 東京
  • Year and Date: 2015-11-01
• [Presentation] ICP-RIEによるGaN,GaInN,InNエッチングとGaInN系LED製作への応用 (2015)
  • Author(s): 鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
  • Organizer: 第4回結晶工学未来塾
  • Place of Presentation: 東京農工大学, 小金井, 東京
  • Year and Date: 2015-10-29
• [Presentation] In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE (2015)
  • Author(s): T. Yamaguchi, T. Sasaki, K. Narutani, M. Sawada, R. Deki, T. Onuma, T. Honda, M. Takahasi, and Y. Nanishi
  • Organizer: The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
  • Place of Presentation: Mayan Riviera, Mexico
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Comprehensive study on inductively coupled plasma reactive ion etching of GaN and InN (2015)
  • Author(s): K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
  • Organizer: The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
  • Place of Presentation: Mayan Riviera, Mexico
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Thermal stability of alpha-(AlGa)2O3 grown by mist CVD (2015)
  • Author(s): M. Takahashi，T. Hatakeyama，T. Onuma，T. Yamaguchi，and T. Honda
  • Organizer: The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
  • Place of Presentation: Mayan Riviera, Mexico
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] MgZnO growth on (0001)sapphire by mist chemical vapor deposition (2015)
  • Author(s): R. Goto, H. Nagai, T. Yamaguchi, T. Onuma, M. Sato and T. Honda,
  • Organizer: 17th International Conference on II-VI Compounds and Related Materials
  • Place of Presentation: Paris, France
  • Year and Date: 2015-09-13
  • Int'l Joint Research
• [Presentation] β-Ga2O3結晶の(010)面における光学的異方性 (2015)
  • Author(s): 尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 増井 建和, 山口 智広, 本田 徹, 東脇正高
  • Organizer: 2015年秋季応用物理学会
  • Place of Presentation: 名古屋国際会議場, 愛知
  • Year and Date: 2015-09-13
• [Presentation] RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定 (2015)
  • Author(s): 澤田 匡崇, 山口 智広, 佐々木 拓生, 鳴谷 建人, 出来 亮太, 尾沼 猛儀, 本田 徹, 高橋 正光, 名西 憓之
  • Organizer: 2015年秋季応用物理学会
  • Place of Presentation: 名古屋国際会議場, 愛知
  • Year and Date: 2015-09-13
• [Presentation] ミストCVD法により製作したα-(AlGa)2O3の熱的安定性 (2015)
  • Author(s): 高橋 幹夫, 畠山 匠, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 2015年秋季応用物理学会
  • Place of Presentation: 名古屋国際会議場, 愛知
  • Year and Date: 2015-09-13
• [Presentation] α-Ga2O3 and α-(AlGa)2O3 Buffer Layers in Growth of GaN (2015)
  • Author(s): T. Yamaguchi, T. Hatakeyama, K. Tanuma, T. Hirasaki, H. Murakami, T. Onuma and T. Honda
  • Organizer: 11th International Conference On Nitride Semiconductors (ICNS-11)
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-08-30
  • Int'l Joint Research
• [Presentation] Correlation between Deep-level Optical Spectroscopy and Cathodoluminescence on Pits Formed on Surface of GaInN Films (2015)
  • Author(s): N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Y. Nakano, and M.Sumiya
  • Organizer: 11th International Conference On Nitride Semiconductors (ICNS-11)
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-08-30
  • Int'l Joint Research
• [Presentation] Fabrication of (Ga, In)2O3-x films on GaN-based LED structures by molecular precursor method for near-UV transparent electrodes (2015)
  • Author(s): T. Honda, H. Nagai, S. Fujioka, R. Goto, T. Onuma, T. Yamaguchi, and M.Sato
  • Organizer: 22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
  • Place of Presentation: Windwook, Namibia
  • Year and Date: 2015-08-14
  • Int'l Joint Research / Invited
• [Presentation] Fabrication of copper thin films using the molecular precursor method (2015)
  • Author(s): H. Nagai, T. Yamaguchi, T. Onuma, I. Takano, T. Honda and M. Sato
  • Organizer: 22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
  • Place of Presentation: Windwook, Namibia
  • Year and Date: 2015-08-14
  • Int'l Joint Research / Invited
• [Presentation] Study on spontaneous emission in nitride-based LEDs with Ag-nanocrystallites ZnO films fabricated by molecular precursor method (2015)
  • Author(s): T. Onuma, T. Shibukawa, D. Taka, K. Serizawa, E. Adachi, H. Nagai, T. Yamaguchi, J.-S. Jang, M. Sato, and T. Honda
  • Organizer: 22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
  • Place of Presentation: Windwook, Namibia
  • Year and Date: 2015-08-14
  • Int'l Joint Research / Invited
• [Presentation] Growth of Group-III Oxides by Mist Chemical Vapor Deposition and Discussion on Thier Growth Mechanisms (2015)
  • Author(s): T. Yamaguchi, K. Tanuma, H. Nagai, T. Onuma, T. Honda, and M. Sato
  • Organizer: 22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
  • Place of Presentation: Windwook, Namibia
  • Year and Date: 2015-08-14
  • Int'l Joint Research / Invited
• [Presentation] Inductively coupled plasma reactive ion etching of GaN and InN (2015)
  • Author(s): K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
  • Organizer: 34th Electronic Materials Symposium
  • Place of Presentation: La Forlet Biwako, Shiga
  • Year and Date: 2015-07-15
• [Presentation] Growth condition dependence of Ga-In-O films by mist-CVD (2015)
  • Author(s): K. Tanuma, R. Goto, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: 34th Electronic Materials Symposium
  • Place of Presentation: La Forlet Biwako, Shiga
  • Year and Date: 2015-07-15
• [Presentation] Determination of Direct and Indirect Bandgap-Energies of beta-Ga2O3 by Polarized Transmittance and Reflectance Spectroscopy (2015)
  • Author(s): T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
  • Organizer: 57th Electronic Materials Conference (EMC-57)
  • Place of Presentation: Ohio, USA
  • Year and Date: 2015-06-21
  • Int'l Joint Research
• [Presentation] Photoelectron spectra of AlN/GaN heterostructure observed by AR-XPS (2015)
  • Author(s): D. Isono, S. Takahashi, Y. Sugiura, T. Yamaguchi, T. Honda
  • Organizer: The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2015-05-17
  • Int'l Joint Research / Invited
• [Presentation] Correlation between green fluorescence and impurities on pits formed on surface of InGa (2015)
  • Author(s): N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Y. Nakano, M. Sumiya
  • Organizer: The 5th Asia-Arab Sustainable Energy Forum & 7th Int. Workshop on SSB (5AASEF)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2015-05-12
  • Int'l Joint Research
• [Presentation] 誘導結合型プラズマ反応性イオンエッチングによるInN エッチング (2015)
  • Author(s): 鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
  • Organizer: 第7回窒化物半導体結晶成長講演会
  • Place of Presentation: 東北大学, 宮城
  • Year and Date: 2015-05-09
• [Presentation] Growth mechanisms of InN and its alloys using droplet elimination by radical beam irradiation (2015)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma,, T. Honda, Y. Nanishi
  • Organizer: Energy Materials Nanotechnology meeting (EMN)
  • Place of Presentation: Phuket, Thailand,
  • Year and Date: 2015-05-08
  • Int'l Joint Research / Invited
• [Presentation] Fabrication of ZnO thin film by mist CVD using molecular precursor solution (2015)
  • Author(s): R. Goto, T. Yasuno, H. Nagai, H. Hara, M. Sato, T. Honda
  • Organizer: Conference on LED and its industrial application ’15 (LEDIA’15)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] Fundamental study on growth of α-(AlGa)2O3 alloys by mist CVD-A study on growth rate of α-Al2O3 compared with α-Ga2O3 (2015)
  • Author(s): M. Takahashi, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
  • Organizer: Conference on LED and its industrial application ’15 (LEDIA’15)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] Aluminum growth on sapphire substrate with surface nitridation by RF-MBE (2015)
  • Author(s): Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Yamaguchi, T. Onuma, T. Honda
  • Organizer: Conference on LED and its industrial application ’15 (LEDIA’15)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] Optical Anisotropy in b-Ga2O3 Crystals Grown by Melt-Growth Methods (2015)
  • Author(s): T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki,
  • Organizer: Conference on LED and its industrial application ’15 (LEDIA’15)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] 窒化ガリウム系発光ダイオードにおける「グリーンギャップ」問題 (2015)
  • Author(s): 本田 徹, 山口 智広
  • Organizer: JAEA放射光科学シンポジウム 2015 「環境・エネルギー研究開発における放射光科学」
  • Place of Presentation: 型放射光施設 SPring-8 放射光普及棟, 佐用町, 兵庫県
  • Year and Date: 2015-03-16 – 2015-03-17
  • Invited
• [Presentation] β-Ga2O3結晶の透過と反射スペクトルの偏光依存性 (2015)
  • Author(s): 尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 増井 建和, 山口 智広, 本田 徹, 東脇 正高
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-15
• [Presentation] 分子プレカーサー水溶液を用いたミストCVD法によるZnO薄膜製作 (2015)
  • Author(s): 後藤 良介, 澁木 勇人, 田沼 圭亮, 畠山 匠, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] RF-MBEによる窒化サファイア基板上アルミニウム薄膜成長 (2015)
  • Author(s): 星川 侑也, 大澤 真弥, 松本 雄大, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] ミストCVDによるα-(AlGa)2O3混晶成長の基礎検討- α-Ga2O3と比較したα-Al2O3の成長速度の検討 (2015)
  • Author(s): 高橋 幹夫, 畠山 匠, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Ga-In-O薄膜のウェットエッチングプロセス検討 (2015)
  • Author(s): 吉田 邦晃, 藤岡 秀平, 後藤 良介, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Growth and doping of In-based nitride semiconductors using DERI method (2015)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
  • Organizer: The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015)
  • Place of Presentation: LOTTE Hotel, Jeju, Korea
  • Year and Date: 2015-02-24 – 2015-02-27
  • Invited
• [Presentation] Progress in InGaN growth by RF-MBE and development to optical device fabrication (2015)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
  • Organizer: SPIE Photonic West 2015
  • Place of Presentation: The Moscone Center, San Francisco, CA, USA
  • Year and Date: 2015-02-13 – 2015-02-18
  • Invited
• [Presentation] Cathode luminescence at 520 nm related on fluorescence green emission from pits formed on surface of GaInN films (2014)
  • Author(s): N. Toyomitsu, L. Sang, J. Wang, T. Yamaguchi, T. Honda and M. Sumiya
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-14 – 2014-12-19
• [Presentation] Properties of near-UV transparent Ga-In-O electrode in GaN-ased MOS-LED (2014)
  • Author(s): S. Fujioka, T. Yasuno, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-14 – 2014-12-19
• [Presentation] Fabrication of -(AlGa)2O3 on sapphire substrate by mist CVD (2014)
  • Author(s): T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-14 – 2014-12-19
• [Presentation] AR-XPS spectra and band-bending properties of +c, -c and m-GaN surfaces (2014)
  • Author(s): D. Isono, S. Fujioka, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: Materials Research Society 2014 Fall Meeting
  • Place of Presentation: Hynes Convention Center, Boston, MA, USA
  • Year and Date: 2014-12-01 – 2014-12-05
• [Presentation] Raman scattering study of α-Ga2O3 single-crystal films grown by mist CVD (2014)
  • Author(s): L. Artus, N. Domenech-Amador, R. Cusco, T. Hatakeyama, T. Yamaguchi and T. Honda
  • Organizer: Materials Research Society 2014 Fall Meeting
  • Place of Presentation: Hynes Convention Center, Boston, MA, USA
  • Year and Date: 2014-12-01 – 2014-12-05
• [Presentation] Growth and characterization of Ga-In-O by mist CVD (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 13th International Symposium on Advanced Technology (ISAT-13)
  • Place of Presentation: Danang, Vietnam
  • Year and Date: 2014-11-13 – 2014-11-16
• [Presentation] Growth of oxide thin films by mist chemical vapor deposition – Application of corundum-structured oxides for growth of GaN - (2014)
  • Author(s): T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 13th International Symposium on Advanced Technology (ISAT-13)
  • Place of Presentation: Danang, Vietnam
  • Year and Date: 2014-11-13 – 2014-11-16
• [Presentation] Mist chemical vapor deposition growth of group-III oxides and its growth mechanism (2014)
  • Author(s): T. Yamaguchi, T. Hatakeyama, K. Tanuma, M. Sugimoto, H. Nagai, T. Onuma, M. Sato and T. Honda
  • Organizer: The Corroborative Conference on Crystal Growth (3CG)
  • Place of Presentation: Phuket, Tailand
  • Year and Date: 2014-11-05
  • Invited
• [Presentation] 下地GaN層の歪みの異なるGaInN薄膜表面ピット形成と蛍光特性 (2014)
  • Author(s): 豊満 直樹, Liwen Sang, Wang Jianyu, 山口 智広, 本田 徹, 角谷 正友
  • Organizer: 第3回応用物理学会結晶工学分科会結晶工学未来塾
  • Place of Presentation: 学習院大学, 豊島区, 東京
  • Year and Date: 2014-11-03
• [Presentation] 六方晶GaN中に挿入した一分子層InNの構造完全性による影響 (2014)
  • Author(s): 渡邊 菜月, 多次見 大樹, 尾沼 猛儀, 山口 智広, 本田 徹, 橋本 直樹, 草部 一秀, 王 科, 吉川 明彦
  • Organizer: 第3回応用物理学会結晶工学分科会結晶工学未来塾
  • Place of Presentation: 学習院大学, 豊島区, 東京
  • Year and Date: 2014-11-03
• [Presentation] Influence of surface oxides for band bending of n-type GaN (2014)
  • Author(s): Y. Sugiura, D. Isono, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Mist chemical vapor deposition growth of α-(AlGa)2O3 (2014)
  • Author(s): T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Characterization of fluorescence emission of GaInN films (2014)
  • Author(s): N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Characterization of GaN thin film grown on pseudo Al templates by radio-frequency plasma-assisted molecular beam epitaxy (2014)
  • Author(s): Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Interface reaction between Al and N atoms in GaN growth on Al by RF-MBE (2014)
  • Author(s): S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Fabrication of ZnO thin film by molecular precursor method (2014)
  • Author(s): R. Goto, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Mist chemical vapor deposition of Ga-In-O films (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] X-ray photoelectron spectroscopy of C+, C- and M-GaN surfaces (2014)
  • Author(s): D. Isono, Y. Sugiura, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Fabrication and characterization of photovoltaic devices consisted of metal-oxide thin films fabricated by molecular precursor method (2014)
  • Author(s): Y. Inaoka, H. Nagai, T. Honda and M. Sato
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Template layer for c-axis oriented ZnO thin films by using a molecular precursor solution (2014)
  • Author(s): T. Shibukawa, H. Nagai, I. Takano, T. Honda, and M. Sato
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Fabrication and electrochemical properties of LiNi0.5Mn0.5O2 thin-film cathode for lithium ion batteries (2014)
  • Author(s): K. Honma, H. Nagai, L. Lu, I. Takano, T. Honda, and M. Sato
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Ga2O3基板の光学特性評価 (2014)
  • Author(s): 尾沼 猛儀, 山口 智広, 伊藤 雄三, 本田 徹, 佐々木 公平, 増井 建和, 東脇 正高
  • Organizer: ワイドギャップ半導体光・電子デバイス第162委員会第91回研究会「酸化物材料の最近の進展」
  • Place of Presentation: 京都大学東京オフィス, 品川, 東京
  • Year and Date: 2014-09-26
  • Invited
• [Presentation] Growth of InGaN alloys using DERI method and fabrication of LED structures (2014)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
  • Organizer: Energy Materials Nanotechnology open access week (EMN open access week)
  • Place of Presentation: Chengdu, China
  • Year and Date: 2014-09-24
  • Invited
• [Presentation] AlOx/AlNヘテロ構造の発光特性 (2014)
  • Author(s): 尾沼 猛儀, 杉浦 洋平, 山口 智広, 本田 徹, 東脇 正高
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Mist CVD法を用いて製作したα-Al2O3基板上Ga-In-O薄膜の評価 (2014)
  • Author(s): 田沼 圭亮, 畠山 匠, 尾沼 猛儀, 山口 智広, 窪谷 茂幸, 片山 竜二, 松岡 隆志, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] RF-MBE法を用いたGaN成長が疑似Al基板に与える影響 (2014)
  • Author(s): 大澤 真弥, 渡邉 悠斗, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 疑似Al基板上GaN薄膜のフォトルミネッセンス評価 (2014)
  • Author(s): 渡邉 悠斗, 大澤 真弥, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] n-GaN結晶のXPSスペクトルにおける内殻準位ピーク非対称性の検討 (2014)
  • Author(s): 磯野 大樹, 網谷 良介, 杉浦 洋平, 山口 智広, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE (2014)
  • Author(s): T. Honda, T. Yamaguchi, Y. Sugiura, D. Isono, Y. Watanabe, S. Osawa, D. Tajimi, T. Iwabuchi, S. Kuboya, T. Tanikawa, R. Katayama and T. Matsuoka
  • Organizer: 18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
  • Place of Presentation: High Country conference center Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
• [Presentation] Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes (2014)
  • Author(s): K. Narutani, T. Yamaguchi, K. Wang, T Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
  • Organizer: 18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
  • Place of Presentation: High Country conference center Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
• [Presentation] Growth of α-Ga2O3 on α-Al2O3 substrate by mist CVD and growth of GaN on α -Ga2O3 buffer layer by RF-MBE (2014)
  • Author(s): T. Yamaguchi, T. Hatakeyama, Y. Sugiura, T. Onuma and T. Honda
  • Organizer: 18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
  • Place of Presentation: High Country conference center Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
• [Presentation] Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes (2014)
  • Author(s): T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda
  • Organizer: International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2014-08-25
  • Invited
• [Presentation] Thickness dependence of pseudo aluminum templates in growth of GaN by RF-MBE (2014)
  • Author(s): S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The International Workshop on Nitride Semiconductors (IWN 2014)
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-24 – 2014-08-29
• [Presentation] Study on structure perfection of one-monolayer thick InN in hexagonal GaN using XRD techniques (2014)
  • Author(s): N. Watanabe, D. Tajimi, N. Hashimoto, K. Kusakabe, K.Wang, T. Yamaguchi, A. Yoshikawa and T. Honda
  • Organizer: The International Workshop on Nitride Semiconductors (IWN 2014)
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-24 – 2014-08-29
• [Presentation] In-situ MBE法を用いたAlOx/AlN/GaNヘテロ構造の製作 (2014)
  • Author(s): 杉浦 洋平, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] Mist CVDを用いた酸化物薄膜成長 (2014)
  • Author(s): 畠山 匠, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] GaN系MOS-LEDを用いたGa-In-O近紫外透明電極の評価 (2014)
  • Author(s): 藤岡 秀平, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] 疑似Al基板上に成長したGaN薄膜の特性評価 (2014)
  • Author(s): 渡邉 悠斗, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] GaN層のケミカルリフトオフに向けたAlの膜厚検討 (2014)
  • Author(s): 大澤 真弥, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] GaInNからの蛍光発光と結晶性の相関 (2014)
  • Author(s): 豊満 直樹, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] 厚膜GaInN成長とホモ接合型青緑LEDsの製作 (2014)
  • Author(s): 鳴谷 健人, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] Mist CVD法を用いて成長したα-Al2O3基板上Ga-In-O薄膜の製作 (2014)
  • Author(s): 田沼 圭亮, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] n-GaN結晶のXPSにおける内部電界強度とピーク非対称性の検討 (2014)
  • Author(s): 磯野 大樹, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] 分子プレカーサー法によるZnO薄膜製作のための熱処理温度の検討 (2014)
  • Author(s): 後藤 良介, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] RF-MBE growth of GaInN films using DERI method and fabrication of p-n homojunction blue-green light-emitting diodes (2014)
  • Author(s): T. Yamaguchi, K. Narutani, T. Onuma, T. Araki, T. Honda and Y. Nanishi
  • Organizer: The 6th International Symposium on Functional Materials (ISFM 2014)
  • Place of Presentation: Singapore
  • Year and Date: 2014-08-07
  • Invited
• [Presentation] RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs (2014)
  • Author(s): T. Yamaguchi, K. Narutani, T. Onuma, T. Honda, T. Araki and Y. Nanishi
  • Organizer: 2014 International Workshop on Future Energy Materials and Devices (IWFEMD 2014)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2014-08-04 – 2014-08-06
  • Invited
• [Presentation] RF-MBE法によるGaInN厚膜成長とpnホモ接合型LEDの製作 (2014)
  • Author(s): 鳴谷 建人, 山口 智広, Ke Wang, 荒木 努, 名西 憓之, Liwen Sang, 角谷 正友, 藤岡 秀平, 尾沼 猛儀, 本田 徹
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 名古屋市, 愛知
  • Year and Date: 2014-07-26
• [Presentation] RF-MBE法を用いた膜厚の異なるAlテンプレート上GaN成長 (2014)
  • Author(s): 大澤 真弥, 渡邉 悠斗, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 名古屋市, 愛知
  • Year and Date: 2014-07-26
• [Presentation] Impact of perfection on one-monolayer thick InN in hexagonal GaN (2014)
  • Author(s): N. Watanabe, D. Tajimi, T. Onuma, N. Hashimoto, K. Kusakabe, K. Wang, A. Yoshikawa, T. Yamaguchi and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] AR-XPS spectra of c-, c+ and m-plane n-GaN crystals (2014)
  • Author(s): D. Isono, R. Amiya, T. Yamaguchi and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Investigation of Ga-In-O films grown on α-Al2O3 substrates by mist CVD (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Blue-green light emitting diodes using pn-GaInN homojunction type-structure (2014)
  • Author(s): K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] “Impact of UV transparent Ga-In-O electrode in vertical-type GaN-based metal oxide semiconductor light-emitting diodes (2014)
  • Author(s): S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Fabrication of the transparent and c-axis oriented ZnO thin film by molecular precursor method (2014)
  • Author(s): T. Shibukawa, H. Nagai, I. Takano, T. Honda and M. Sato
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides (2014)
  • Author(s): T. Yamaguchi, T. Onuma, H. Nagai, C. Mochizuki, M. Sato, T. Honda, T. Araki and Y. Nanishi
  • Organizer: Third International Conference on Materials Energy and Environments (ICMEE 2014)
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2014-07-02 – 2014-07-05
  • Invited
• [Presentation] Fabrication of copper thin films using the solution based method (2014)
  • Author(s): H. Nagai, T. Nakano, S. Mita, T. Yamaguchi, I. Takano, T. Honda and M. Sato
  • Organizer: Third International Conference on Materials Energy and Environments (ICMEE 2014)
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2014-07-02 – 2014-07-05
  • Invited
• [Presentation] Mist CVD growth of Ga-In-O films grown on α-Al2O3 substrates (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
  • Organizer: International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2014-06-10 – 2014-06-14
• [Presentation] Spin-coating fabrication of In-doped ZnO films by molecular precursor method (2014)
  • Author(s): R. Goto, T. Yasuno, T. Hatakeyama, H. Hara, H. Nagai, T. Yamaguchi, M. Sato, T. Honda
  • Organizer: International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2014-06-10 – 2014-06-14
• [Presentation] Fabrication of Pseudo Aluminum Templates on 4H-SiC and Growth of GaN on Pseudo Aluminum Templates by RF-MBE (2014)
  • Author(s): Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
  • Organizer: 5th International Symposium on Growth of III-Nitrides (ISGN-5)
  • Place of Presentation: The Westin, Peachtree Plaza, Atlanta, Georgia, USA
  • Year and Date: 2014-05-18 – 2014-05-22
• [Presentation] Influence of Surface Oxides for Band Bending of N-Type GaN (2014)
  • Author(s): Y. Sugiura, R. Amiya, D. Isono, T. Yamaguchi and T. Honda
  • Organizer: 5th International Symposium on Growth of III-Nitrides (ISGN-5)
  • Place of Presentation: The Westin, Peachtree Plaza, Atlanta, Georgia, USA
  • Year and Date: 2014-05-18 – 2014-05-22
• [Presentation] Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys (2014)
  • Author(s): T. Yamaguchi, K. Tanuma, T. Hatakeyama, T. Onuma and T. Honda
  • Organizer: he 41st International Symposium on Compound Semiconductor (ISCS 2014)
  • Place of Presentation: Le Column, Montpellier, France
  • Year and Date: 2014-05-11 – 2014-05-14
• [Presentation] Light emission properties of ultra thin InN in the GaN matrix (2014)
  • Author(s): T. Honda, T. Yamaguchi, T. Onuma, D. Tajimi, N. Watanabe, N. Hashimoto, K. Kusakabe and A. Yoshikawa
  • Organizer: International Conference on Metamaterials and Nanophysics (Metanano2014)
  • Place of Presentation: Hotel Melia Varadero, Varadero, Cuba
  • Year and Date: 2014-04-22 – 2014-05-01
  • Invited
• [Presentation] Optical Properties of Ga-In-O Polycrystalline Films Fabricated by Molecular Precursor Method (2014)
  • Author(s): T. Onuma, T. Yasuno, S. Takano, R. Goto, S. Fujioka, T. Hatakeyama, H. Hara, C. Mochizuki, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-25
• [Presentation] Characterization of Dark Spots on GaInN Films by Using Fluorescence Microscope and Secondary Ion Mass Spectroscopy (2014)
  • Author(s): N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] RF-MBE Growth of pn-GaInN Structure and Fabrication of Blue-Green Homojunction-Type Light Emitting Diode (2014)
  • Author(s): K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Fabrication of Vertical-Type GaN-Based Metal Oxide Semiconductor Light-Emitting Diodes (2014)
  • Author(s): S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Effect of Pseudo Aluminum Templates in RF-MBE Growth of GaN on 4H-SiC (2014)
  • Author(s): Y. Watanabe, S. Osawa, D. Tajimi, T. Yamaguchi, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Fabrication of In-Doped ZnO Thin Film by Molecular Precursor Method (2014)
  • Author(s): R. Goto, T. Yasuno, H. Nagai, H. Hara, M. Sato, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] RF-MBE growth of GaN on alpha-Ga2O3 and mist CVD growth of Ga2O3 on GaN (2014)
  • Author(s): T. Honda, T. Yamaguchi, T. Hatakeyama, D. Tajimi and Y. Sugiura
  • Organizer: SPIE Photonic West 2014 OPTO conference
  • Place of Presentation: The Moscone Center, San Francisco, California, USA
• [Presentation] 分子プリカーサｰ法で製作したGa-In-O多結晶薄膜の発光特性 (2014)
  • Author(s): 尾沼猛儀、安野泰平、高野宗一郎、後藤良介、藤岡秀平、畠山匠、原広樹、望月千尋、永井裕己、山口智広、佐藤光史、本田徹
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学淵野辺キャンパス、神奈川県
• [Presentation] Polarized Raman spectra in beta-Ga2O3 crystals (2013)
  • Author(s): T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Matsui and T. Honda
  • Organizer: The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
  • Place of Presentation: University of Warsaw, Warsaw, Poland
• [Presentation] RF-MBE growth of GaN films on nitridated alpha-Ga2O3 buffer layer (2013)
  • Author(s): T. Yamaguchi, T. Hatakeyama, D. Tajimi, Y. Sugiura, T. Onuma and T. Honda
  • Organizer: The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
  • Place of Presentation: University of Warsaw, Warsaw, Poland
• [Presentation] Impact of the surface modification of the Ga- and N-face n-GaN Schottky diodes with low reverse-bias leakage current (2013)
  • Author(s): T. Honda, T. Yamaguchi, N. Sakai, S. Fujioka, R. Amiya and Y. Sugiura
  • Organizer: The 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Gaylord Convention Center, Washington DC, USA
• [Presentation] RF-MBE growth and characterization of GaN films on alpha-Ga2O3/sapphire template (2013)
  • Author(s): T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura and T. Honda
  • Organizer: The 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Gaylord Convention Center, Washington DC, USA
• [Presentation] Crystallized AlOx/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (2013)
  • Author(s): Y. Sugiura, T. Honda and M. Higashiwaki
  • Organizer: The 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Gaylord Convention Center, Washington DC, USA
• [Presentation] Fabrication of Ga-In-O films by molecular precursor method and their future application of transparent electrodes (2013)
  • Author(s): T. Yasuno, H. Nagai, H. Hara, Y. Sugiura, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: The 16th International Conference on II-VI Compounds and Related Materials
  • Place of Presentation: Nagahama Royal Hotel, Nagahama, Shiga, Japan
• [Presentation] Characterization of fabricated Ga-In-O films by molecular precursor method and their future application of UV transparent electrodes (2013)
  • Author(s): T. Yasuno, R. Goto, H. Nagai, H. Hara, Y. SUgiura, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: The 20th International SPACC Symposium
  • Place of Presentation: Changchun University of Science and Technology, China
• [Presentation] Growth of InN and related alloys using DERI method toward fabrication of optoelectronic devices (2013)
  • Author(s): T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki and Y. Nanishi
  • Organizer: The 2nd International Conference on Advanced Electromaterials
  • Place of Presentation: ICC jeju, Jeju, Korea
  • Invited
• [Presentation] Effects of (Al, Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes (2013)
  • Author(s): S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 2nd International Conference on Advanced Electromaterials
  • Place of Presentation: ICC jeju, Jeju, Korea
• [Presentation] R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi and T. Honda (2013)
  • Author(s): Impact of native surface oxide on GaN layers for their surface band bending
  • Organizer: The 2nd International Conference on Advanced Electromaterials
  • Place of Presentation: ICC jeju, Jeju, Korea
• [Presentation] RF-MBE growth of GaN/Al heterostructures on 4H-SiC (2013)
  • Author(s): S. Osawa, D. Tajimi, T. Yamaguchi and T. Honda
  • Organizer: The 2nd International Conference on Advanced Electromaterials
  • Place of Presentation: ICC jeju, Jeju, Korea
• [Presentation] Mist CVD growth of alpha-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alpha-Ga2O3/sapphire templates (2013)
  • Author(s): T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, R. Amiya, T. Onuma and T. Honda
  • Organizer: The 12th International Symposium on Advanced Technology
  • Place of Presentation: Southern Taiwan University of Science and Technology, Tainan, Taiwan
• [Presentation] Ga2O3 and In2O3 growth by mist CVD (2013)
  • Author(s): K. Tanuma, T. Yamaguchi, T. Hatakeyama, T. Onuma and T. Honda
  • Organizer: The 12th International Symposium on Advanced Technology
  • Place of Presentation: Southern Taiwan University of Science and Technology, Tainan, Taiwan
• [Presentation] RF-MBE growth of AlOx/AlN/GaN heterostructures (2013)
  • Author(s): Y. SUgiura, T. Yamaguchi, T. Hatakeyama, T. Honda and M. Higashiwaki
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] Chemical fabrication of transparent Cu metal thin film for infrared reflective thin film (2013)
  • Author(s): H. Nagai, T. Okada, T. Honda and M. Sato
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] Influence of native surface oxides on GaN surface band bending (2013)
  • Author(s): R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi and T. Honda
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] Effects of surface modification on emission property of GaN Schottky diodes (2013)
  • Author(s): S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] RF-MBE growth of GaN films on alpha-Ga2O3/sapphire template (2013)
  • Author(s): T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura and T. Honda
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] The GaN growth on pseudo Al templates by molecular beam epitaxy (2013)
  • Author(s): S. Osawa, T. Hatakeyama, D. Tajimi, T. Yamaguchi and T. Honda
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] Characterization of Ga-In-O films fabricated by molecular precursor method (2013)
  • Author(s): T. Yasuno, T. Oda, H. Nagai, H. Hara, Y. Sugiura, T.Yamaguchi, M. Sato and T. Honda
  • Organizer: The 32nd Electromaterials Symposium
  • Place of Presentation: Laforet Biwako, Shiga, Japan
• [Presentation] 表面酸化物によるGaN表面フェルミ準位に及ぼす影響 (2013)
  • Author(s): 網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
  • Place of Presentation: 大阪大学銀杏会館、吹田市、大阪府
• [Presentation] RF-MBE法による疑似Al基板上へのGaN成長 (2013)
  • Author(s): 多次見大樹、大澤真弥、山口智広、本田徹
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
  • Place of Presentation: 大阪大学銀杏会館、吹田市、大阪府
• [Presentation] In-situ RF-MBEによるAlN/GaNヘテロ構造上へのAlOx薄膜形成 (2013)
  • Author(s): 杉浦洋平、東脇正高、本田徹
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
  • Place of Presentation: 大阪大学銀杏会館、吹田市、大阪府
• [Presentation] 4H-SiC上の疑似Al基板製作と疑似基板上へのGaN RF-MBE成長 (2013)
  • Author(s): 大澤真弥、多次見大樹、山口智広、本田徹
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] In-situ RF-MBEによるAlN/GaNヘテロ構造上へのAlOx薄膜成長 (2013)
  • Author(s): 杉浦洋平、東脇正高、本田徹
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] beta-Ga2O3結晶における青色発光強度と抵抗率の相関 (2013)
  • Author(s): 尾沼猛儀、藤岡秀平、山口智広、東脇正高、佐々木公平、増井建和、本田徹
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] 表面酸化物のGaN表面フェルミ準位と表面バンド曲がりに及ぼす影響 (2013)
  • Author(s): 網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] ミストCVD法を用いたGaN基板上へのGa2O3成長 (2013)
  • Author(s): 多次見大樹、奥秋良隆、畠山匠、金子健太郎、藤田静雄、尾沼猛儀、山口智広、本田徹
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] GaN系ショットキー型発光ダイオードにおける(Al, Ga)Ox/GaN界面準位の影響 (2013)
  • Author(s): 藤岡秀平、網谷良介、尾沼猛儀、山口智広、本田徹
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] Use of alpha-Ga2O3/alpha-Al2O3 templates in GaN growth (2013)
  • Author(s): T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. SUgiura and T. Honda
  • Organizer: 2013 JSPS-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス、京都府
• [Presentation] 分子プレカーサｰ法を用いたIn添加ZnO薄膜の発光特性 (2013)
  • Author(s): 後藤良介、安野泰平、永井裕己、山口智広、本田徹
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学淵野辺キャンパス、神奈川県
• [Presentation] 蛍光顕微鏡と2次イオン質量分析を用いたGaInN薄膜の不均一評価 (2013)
  • Author(s): 豊満直樹、Liwen Sang, 山口智広、本田徹、角谷正友
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学淵野辺キャンパス、神奈川県
• [Presentation] ミストCVD法を用いたGa2O3結晶成長における成長速度の温度依存性 (2013)
  • Author(s): 田沼圭亮、杉本麻由花、畠山匠、尾沼猛儀、山口智広、本田徹
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学淵野辺キャンパス、神奈川県
• [Presentation] GaInNのRF-MBE成長とpnホモ接合型青緑色LEDの製作 (2013)
  • Author(s): 鳴谷健人、山口智広、Ke Wang, 荒木努、名西やすし、Liwen Sang, 角谷正友、藤岡秀平、尾沼猛儀、本田徹
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学淵野辺キャンパス、神奈川県