| Project/Area Number |
25420352
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Information and Communications Technology |
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Principal Investigator |
QIU WEI 国立研究開発法人情報通信研究機構, 未来ICT研究所ナノICT研究室, 研究員 (90535189)
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| Co-Investigator(Renkei-kenkyūsha) |
KAWAKAMI AKIRA 国立研究開発法人情報通信研究機構, 未来ICT研究所ナノICT研究室, 主任研究員 (90359092)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 超伝導 / TiN / NbN / 超伝導共振器 / 誘電損失 / エピタキシャル / ジョセフソン接合 / 超伝導量子回路 / Superconducting / CPW / Quality factor / Dielectric loss / Epitaxial / Al / quality factor / dielectri loss / epitaxial / qubit / junction / energy relaxation time / superconducting / Josephson |
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| Outline of Final Research Achievements |
This funded research project studies the intrinsic two level systems (TLSs) due to the dielectric loss of superconducting quantum circuit. Full epitaxially grown superconducting NbN resonator fabricates on a hydrogen terminated single crystal Si(100) substrate with a thin TiN film served as a buffer layer. The dielectric loss of this TiN/NbN resonator device is 2.25x10e-6, comparable to the same level of epitaxiall grown TiN resonator, and a significant improvement from the loss of 1x10e-4 level in epitaxial NbN resonator in single crystal MgO substrate. The TiN/NbN structure results in a more smooth surface roughness (< 0.5 nm), improved from a relatively high surface roughness (> 0.5 nm) in epitaxial TiN thin film, which is more suitable for novel Josephson device in superconducting quantum bit circuit.
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