Properties and functionalization of nonstoichiometric silicon-titanium nitrides due to laser-beam assisted ion implantation
| Project/Area Number |
25420687
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SUTO SYOUZO 東北大学, 理学研究科, 教授 (40171277)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | 不定比化合物 / 窒化物 / 機能性材料 / イオン注入 / その場観察 / 透過電子顕微鏡 / 電子エネルギー損失分光 / 分子軌道計算 / 不定比物性 |
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| Outline of Final Research Achievements |
In-situ TEM and EELS observations have elucidated that the release of H atoms in TiHx proceeds preferentially in the early N-implantation stage, and that in the subsequent N-implantation stage the number of N atoms bonding to Ti atoms increases gradually with increasing N-concentration. It is concluded that the shift of the atoms on the closed-packed plane induced by the change of bonding interaction of Ti sublattices with ligand N atoms plays an important role in the epitaxial transformation between fcc- and hcp-Ti sublattices due to the occupation by implanted N atoms, and that the invasion of an implanted N atom to the N-unoccupied octahedral site in the neighboring unit cell next to the N-occupied one in hcp-Ti occurs preferentially above the N/Ti＝0.25, and induces the growth of nucleus of the hcp-fcc transformation.
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Report
(4 results)
Research Products
(6 results)
