Development of AlN growth method using AlN powder

• Project/Area Number: 25420712
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: Kyushu University
• Principal Investigator: Kangawa Yoshihiro 九州大学, 応用力学研究所, 准教授 (90327320)
• Research Collaborator: BOĆKOWSKI Michał ポーランド科学アカデミー, 高圧物理学研究所, 教授 ; MEISSNER Elke フラウンホーファー研究機構, 集積システム・デバイス技術研究所, 上席研究員
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2014: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000); Fiscal Year 2013: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
• Keywords: 溶液成長 / 窒化アルミニウム / その場観察 / パワーデバイス用材料

Outline of Final Research Achievements

Aluminum nitride (AlN) and related compound semiconductors, such as AlGaN, have attracted much attention because of their great potential as power devices. Interfacial phenomena at the liquid/solid interface under high temperatures were observed in real time to understand the growth process of AlN during solid-source solution growth. In this study, we used transparent substrate, i.e., AlN/sapphire template, so as to observe high-temperature liquid/solid interfaces through the substrate from the bottom. Though a poly-crystal formed because of melt-back etching during the initial stage of growth; nevertheless, initial growth process was successfully observed by the in-situ observation system. This in-situ observation system could be a powerful tool for investigating interfacial phenomena at high-temperature liquid/solid interfaces and optimizing crystal growth conditions.

Research Products

• [Int'l Joint Research] Institute of High Pressure Physics(Poland)
• [Int'l Joint Research] Fraunhofer IISB(Germany)
• [Int'l Joint Research]
• [Journal Article] Structural and optical properties of AlN grown by solid source solution growth method (2015)
  • Author(s): Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto
  • Journal Title: Jpn. J. Appl. Phys. Volume: 54 Issue: 8 Pages: 085501-085501
  • DOI: 10.7567/jjap.54.085501
  • NAID: 210000145511
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN (2015)
  • Author(s): Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto
  • Journal Title: Appl. Phys. Express Volume: 8 Issue: 6 Pages: 065601-065601
  • DOI: 10.7567/apex.8.065601
  • NAID: 210000137566
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] AlN 溶液成長における固-液界面その場観察装置の開発 (2015)
  • Author(s): 寒川 義裕, 三宅 秀人, Michal Bockowski, 柿本 浩一
  • Journal Title: 日本結晶成長学会誌 Volume: 42 Pages: 232-237
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] Development of in-situ observation system for high-temperature liquid/solid interfaces: application to solid-source solution growth of AlN (2015)
  • Author(s): Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto
  • Organizer: Fifth European Conference on Crystal Growth (ECCG-5)
  • Place of Presentation: Bologna, Italy
  • Year and Date: 2015-09-09
  • Int'l Joint Research
• [Presentation] Development of in situ observation system for liquid/solid interface during solution growth of AlN (2015)
  • Author(s): Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto
  • Organizer: Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP2015)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2015-08-20
  • Int'l Joint Research / Invited
• [Presentation] AlN固体ソース溶液成長における固‐液界面形状のその場観察 (2015)
  • Author(s): 草場 彰, 住吉 央朗, 寒川 義裕, 三宅 秀人, 柿本 浩一
  • Organizer: 第7回窒化物半導体結晶成長講演会
  • Place of Presentation: 仙台
  • Year and Date: 2015-05-07
• [Presentation] CL studies of AlN/AlN(0001) grown by solid source solution growth method (2014)
  • Author(s): H. Sumiyoshi, Y. Kangawa, S. F. Chichibu, M. Knetzger, E. Meissner, Y. Iwasaki, K. Kakimoto
  • Organizer: International Workshop on Nitride Semiconductors 2014 (IWN2014)
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-24 – 2014-08-29
• [Presentation] 固体ソース溶液成長におけるAlN成長機構の解析 (2014)
  • Author(s): 住吉央朗, 寒川義裕, 秩父重英, M. Knetzger, E. Meissner, 岩崎洋介, 柿本 浩一
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学
  • Year and Date: 2014-07-25 – 2014-07-26
• [Presentation] 電力変換の高効率化に向けた次世代パワーデバイス用AlN結晶の開発 (2014)
  • Author(s): 寒川義裕
  • Organizer: 九州大学共進化社会システム創成拠点フォーラム
  • Place of Presentation: 市ヶ谷、7A-8
• [Presentation] Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method (2013)
  • Author(s): Y. Kangawa, S. Nagata, K. Kakimoto
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Kloster Seeon, Germany, TU4-3
  • Invited
• [Presentation] Dislocation propagation behavior in AlN grown by solid-source solution growth (3SG) method (2013)
  • Author(s): Y. Kangawa, S. Nagata, B. M. Epelbaum, K. Kakimoto
  • Organizer: JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学、18a-M6-1
• [Presentation] Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method (2013)
  • Author(s): Y. Kangawa, S. Nagata, B. M. Epelbaum, K. Kakimoto
  • Organizer: 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
  • Place of Presentation: Warsaw, Poland, WeO2-28742