| Project/Area Number |
25420712
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Research Collaborator |
BOĆKOWSKI Michał ポーランド科学アカデミー, 高圧物理学研究所, 教授
MEISSNER Elke フラウンホーファー研究機構, 集積システム・デバイス技術研究所, 上席研究員
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2013: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 溶液成長 / 窒化アルミニウム / その場観察 / パワーデバイス用材料 |
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| Outline of Final Research Achievements |
Aluminum nitride (AlN) and related compound semiconductors, such as AlGaN, have attracted much attention because of their great potential as power devices. Interfacial phenomena at the liquid/solid interface under high temperatures were observed in real time to understand the growth process of AlN during solid-source solution growth. In this study, we used transparent substrate, i.e., AlN/sapphire template, so as to observe high-temperature liquid/solid interfaces through the substrate from the bottom. Though a poly-crystal formed because of melt-back etching during the initial stage of growth; nevertheless, initial growth process was successfully observed by the in-situ observation system. This in-situ observation system could be a powerful tool for investigating interfacial phenomena at high-temperature liquid/solid interfaces and optimizing crystal growth conditions.
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