Preparation of lattice mismatch-controlled substrates by means of ion beam-induced crystallization

• Project/Area Number: 25420743
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Composite materials/Surface and interface engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: HISHITA Shunichi 国立研究開発法人物質・材料研究機構, 経営企画部門, 特別研究員 (40354419)
• Co-Investigator(Kenkyū-buntansha): SAKAGUCHI Isao 国立研究開発法人物質・材料研究機構, 機能性材料拠点, グループリーダー (20343866)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: イオンビーム誘起結晶 / イオン照射 / チタニア / 単結晶基板 / 組成調整 / 平滑表面 / 格子ミスマッチ / イオンビーム誘起結晶成長 / 単結晶 / 表面平滑性 / 格子定数

Outline of Final Research Achievements

The object of this study is to prepare crystal substrates with the well-flattened surface and controlled surface composition for epitaxial thin film growth by using the ion beam-induced crystallization. The atomically flattened and well-crystallized TiO2(110) crystals with the surface composition of Sn0.126Ti0.874O2 was obtained by Sn+ ion-implantation at 823K with an energy of 50keV and a fluence of 2E21 ions/m2. It was found that one tenth of implanted ions were contributed to modify the surface composition and the remains were diffused to deeper part of the crystal than that predicted by the conventional theory.

Research Products

• [Presentation] 高イオン注入試料における原子分布 (2014)
  • Author(s): 菱田 俊一、坂口 勲
  • Organizer: 日本セラミックス協会第２７回秋季シンポジウム
  • Place of Presentation: 鹿児島大学
  • Year and Date: 2014-09-09 – 2014-09-11
• [Presentation] イオン照射によるチタニア単結晶の表面構造改質：結晶面依存性
  • Author(s): 菱田俊一
  • Organizer: 日本セラミックス協会
  • Place of Presentation: 慶応大学日吉校舎 （神奈川県）