| Project/Area Number |
25420760
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | The University of Shiga Prefecture |
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Principal Investigator |
Oku Takeo 滋賀県立大学, 工学部, 教授 (30221849)
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| Co-Investigator(Renkei-kenkyūsha) |
Tsuyoshi Akiyama 滋賀県立大学, 工学部, 准教授 (20304751)
Atsushi Suzuki 滋賀県立大学, 工学部, 助教 (30281603)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 太陽電池材料 / 相互浸透型 / ペロブスイカイト / 14族 / 有機無機複合 / ドナー・アクセプター / 光起電力 / 量子ドット / 自己組織 / ドナーアクセプター |
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| Outline of Final Research Achievements |
14-group-element-based solar cells with DA interpenetrated-junctions were developed in the present work. Various TiO2/CH3NH3PbI3-based photovoltaic devices were fabricated and characterized. Elemental doping to the perovskite structure and TiO2 were studied by experiments and theoretical calculations, as follows: Cs and Rb doping to the CH3NH3 positions for stability of the structure; Ge, Sn and Sb doping to the Pb positions for improvement of the semiconducting properties; Cl and Br doping to the I positions for enhancement of carrier mobility. PCBM:P3HT:ZnPc DA interpenetrated-junction solar cells with an inverted structure were also fabricated, and the short-circuit current density of the solar cells were improved by the ZnPc addition and Ge dot formation. Conversion efficiencies of spherical Si solar cells coated with SnOx:F anti-reflection thin films were also improved by controlling the interfacial structures. Guidelines for device design were constructed for the new solar cells.
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