| Project/Area Number |
25600013
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | Tohoku Institute of Technology (2014)
The University of Tokyo (2013) |
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Principal Investigator |
SHIBATA Kenji 東北工業大学, 工学部, 講師 (00436578)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 量子ドット / テラヘルツ / トランジスタ / テラヘルツ／赤外材料・素子 / 単一電子トランジスタ / テラヘルツ/赤外材料・素子 |
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| Outline of Final Research Achievements |
Electrical manipulation and read-out of quantum mechanical states of electrons in zero-dimensional (0D) nanostructures is a key to great innovation in quantum information processing. In self-assembled InAs quantum dots (QDs), charging/orbital quantization energies are typically 10-40 meV, which corresponds to the THz range. Moreover, electrons in InAs QDs have very large g-factors and also experience strong spin-orbit interaction. InAs QDs are therefore a good candidate for their applications to spintronic and quantum information devices which work in THz range. In this work, we have investigated the electron transport through a single self-assembled InAs QD under THz wave irradiation in order to open new possibilities of controlling carrier dynamics in quantum nanostructures by THz radiation.
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