Development of germanium based Landau quantum oscillation devices at room temperature
| Project/Area Number |
25600014
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 半導体 / ゲルマニウム / ランダウ準位 / 室温量子振動 / スピン注入 / スピントロニクス / バレートロニクス / 室温スピン注入 / 伸張歪み |
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| Outline of Final Research Achievements |
Aim of this study was development of germanium based Landau quantum oscillation devices operated at room temperature by using band engineering and valleytronics based on tensile strained germanium on silicon and germanium quantum well structures.
We have demonstrated (1)a selective valley optical excitation method by 30 band k・p perturbation theory, (2)optical spin injection into tensile strained germanium at room temperature by time-resolved circular polarized photoluminescence, (3) optical spin injection into germanium multiple quantum wells above 375 K. We have verified the current driven Landau quantum oscillation devices by utilizing inter-valley scattering of hot electron even at room temperature.
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Report
(3 results)
Research Products
(20 results)
