| Project/Area Number |
25600016
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
KIKKAWA Jun 物質・材料研究機構, 先端的共通技術部門, 主任研究員 (20435754)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 熱電ナノ材料 / 半導体 / 分子線エピタキシー / 熱伝導 / ナノドット / 熱電変換材料 / シリコン系材料 / MBE / ユビキタス元素 |
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| Outline of Final Research Achievements |
In this study, we aimed at independent control of electric and thermal conductivities using Si films including Ge nanodots, where Si layers and Ge nanodots work as carrier transport layers and phonon scatters, respectively. We formed Si films including epitaxial Ge nanodots using the original ultrathin SiO2 film technique for nanodot formation. As a result, we succeeded in drastic reduction of thermal conductivity with small Ge content compared with conventional SiGe alloy. It was found that the reduction effect depended on the Ge ND size. This means that Ge nanodots dominantly determined the thermal conductivity independently of Si layers for carrier transport. This result gives a guideline for independent control of electric and thermal conductivities.
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