| Project/Area Number |
25600031
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanomaterials chemistry
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| Research Institution | Meijo University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
NARITSUKA SHIGEYA 名城大学, 理工学部, 教授 (80282680)
TANAKA SHIN-ICHIRO 大阪大学, 産業科学研究所, 准教授 (00227141)
SAIDA TAKAHIRO 名城大学, 理工学部, 助教 (90710905)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | グラフェン / LPE法 / ガリウム / 液相成長法 / SiC / Ga / 液相エピタキシャル成長 / 過飽和度 |
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| Outline of Final Research Achievements |
We carried out direct growth of graphene layers on sapphire substrates by liquid phase epitaxial growth (LPE) using Ga as melts. In this growth, we used SiC powders and amorphous carbon layers as source materials, and the grown graphene layers were characterized by Raman and X-ray photoelectron spectroscopy (XPS). Even when SiC powders were used, graphene with several layers were grown. When amorphous carbon layers (1.3 nm in thickness) were used, good quality graphene layers were obtained. The thickness of the graphene layers were estimated to be 1-2 nm.
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