Fabrication of Si nanoparticles from Si swarf by use of photochemical dissolution and application to solar cells

• Project/Area Number: 25600041
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials engineering
• Research Institution: Osaka University
• Principal Investigator: KOBAYASHI HIKARU 大阪大学, 産業科学研究所, 教授 (90195800)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: シリコンナノパーティクル / 太陽電池 / 硝酸酸化 / フォトルミネセンス / 粒径制御 / HCN水溶液 / 洗浄 / 量子サイズ効果

Outline of Final Research Achievements

Si nanoparticles have been fabricated from Si swarf by use of milling methods. Produced Si nanoparticles possess the maximum volume distribution of ~5 nm. Si nanoparticles with the HF treatment are stable in air, i.e., only 0.8 nm SiO2 formation by leaving in air for a week. Solar cells with the p-type Si nanoparticles/n-Si substrates are fabricated. The solar cells show good rectifying behavior and photoresponse. The nitric acid treatment followed by the heat treatment greatly decreases contact resistance and the conversion efficiency was markedly improved.

Research Products

• [Journal Article] Fabrication of SI nanoparticles from Si swarf and application to solar cells (2014)
  • Author(s): Masanori Maeda, Kentaro Imamura, Taketoshi Matsumoto, Hikaru Kobayashi
  • Journal Title: Applied Surface Science Volume: 312 Pages: 39-42
  • DOI: 10.1016/j.apsusc.2014.02.131
  • Peer Reviewed
• [Journal Article] Si nanoparticles fabricated from Si swarf by photochemical method (2014)
  • Author(s): T. Matsumoto, M. Maeda, J. Furukawa, W-.B. Kim, H. Kobayashi
  • Journal Title: J. Nanopart. Res. Volume: 16 Issue: 3
  • DOI: 10.1007/s11051-013-2240-y
  • Peer Reviewed
• [Journal Article] Hydrogen effect on nanostructural features of nanocrystalline silicon thin films deposited at 200˚C by PECVD (2014)
  • Author(s): A.M. Ali, H. Kobayashi
  • Journal Title: J. Non-cryst. Solids. Volume: 385 Pages: 13-17
  • DOI: 10.1016/j.jnoncrysol.2013.10.019
• [Presentation] シリコンナノ粒子による有機分子のフォトルミネッセンス増強 (2014)
  • Author(s): 前田譲章，松本健俊，小林光
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 東京
• [Presentation] Blue and green luminescent Si nanoparticles fabricated from Si swarf (2014)
  • Author(s): M. Maeda, T. Matsumoto, H. Kobayashi
  • Organizer: The 17th SANKEN International Symposium and the 2nd International Symposium of Nano-Macro Matrials, Devices, and System Research Alliance Project
  • Place of Presentation: 大阪
• [Presentation] Nitric acid oxidation of Si (NAOS) method for application to thin film transistors (TFT), eternal memory “digital Rosetta Stone”, and Si solar cells (2013)
  • Author(s): T. Matsumoto, M. Maeda, T. Akai, S. Imai, H. Kobayashi
  • Organizer: 8th Solid State Surfaces and Interfaces
  • Place of Presentation: Smolenice, Slovakia
  • Invited
• [Presentation] 切粉からのシリコンナノ粒子の創製と蛍光体への応用 (2013)
  • Author(s): 前田譲章，松本健俊，小林光
  • Organizer: 表面・界面スペクトロスコピー2013
  • Place of Presentation: 静岡
• [Presentation] シリコン切粉を用いた可視光発行シリコンナノ粒子の作製 (2013)
  • Author(s): 前田譲章，松本健俊，小林光
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 京都
• [Presentation] 切粉からのシリコンナノパーティクルの形成とその応用
  • Author(s): 小林光
  • Organizer: 半導体ネットおかやま例会
  • Place of Presentation: 岡山
  • Invited
• [Patent(Industrial Property Rights)] シリコンナノ粒子を用いた発光体及びその製造方法 (2014)
  • Inventor(s): 小林光、前田譲章
  • Industrial Property Rights Holder: 小林光
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-038421
  • Filing Date: 2014-02-28
• [Patent(Industrial Property Rights)] シリコン微細粒子の形成方法及びそれを用いた発光体並びにその製造方法 (2013)
  • Inventor(s): 小林光、前田譲章
  • Industrial Property Rights Holder: 小林光
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-188227
  • Filing Date: 2013-09-10